SE150180G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SE150180G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 520 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 180 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 314 nC
trⓘ - Tiempo de subida: 85 nS
Cossⓘ - Capacitancia de salida: 1100 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Paquete / Cubierta: TO247 TO263
Búsqueda de reemplazo de MOSFET SE150180G
SE150180G Datasheet (PDF)
se150180g.pdf
SE150180GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V = 150VDSlow operation voltage. This device is R =4.4m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline
se150180gts.pdf
SE150180GTSN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V = 150VDSlow operation voltage. This device is R =4.8m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outlin
se150110g.pdf
SE150110GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V =150VDSlow operation voltage. This device is R =6m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD