All MOSFET. SE150180G Datasheet

 

SE150180G Datasheet and Replacement


   Type Designator: SE150180G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO247 TO263
 

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SE150180G Datasheet (PDF)

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SE150180G

SE150180GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V = 150VDSlow operation voltage. This device is R =4.4m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline

 0.1. Size:339K  cn sino-ic
 se150180gts.pdf pdf_icon

SE150180G

SE150180GTSN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V = 150VDSlow operation voltage. This device is R =4.8m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outlin

 8.1. Size:490K  cn sino-ic
 se150110g.pdf pdf_icon

SE150180G

SE150110GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V =150VDSlow operation voltage. This device is R =6m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline

Datasheet: SE100P60 , SE120120G , SE12060GA , SE1216 , SE12N50FRA , SE12N65 , SE138U , SE150110G , IRFP250 , SE150180GTS , SE15N50FRA , SE18NS65A , SE1991G , SE1991GA , SE200100G , SE20040 , SE20075 .

History: FDS4141

Keywords - SE150180G MOSFET datasheet

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