SE150180G Datasheet and Replacement
Type Designator: SE150180G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 520 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 1100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO247 TO263
SE150180G substitution
SE150180G Datasheet (PDF)
se150180g.pdf

SE150180GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V = 150VDSlow operation voltage. This device is R =4.4m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline
se150180gts.pdf

SE150180GTSN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V = 150VDSlow operation voltage. This device is R =4.8m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outlin
se150110g.pdf

SE150110GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V =150VDSlow operation voltage. This device is R =6m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline
Datasheet: SE100P60 , SE120120G , SE12060GA , SE1216 , SE12N50FRA , SE12N65 , SE138U , SE150110G , IRFP250 , SE150180GTS , SE15N50FRA , SE18NS65A , SE1991G , SE1991GA , SE200100G , SE20040 , SE20075 .
History: KDB2532 | WMJ18N50D1B | TMP16N60 | HFS2N70S | MTN5N60I3 | B4N80 | TMP11N50
Keywords - SE150180G MOSFET datasheet
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History: KDB2532 | WMJ18N50D1B | TMP16N60 | HFS2N70S | MTN5N60I3 | B4N80 | TMP11N50



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