SE20040 Todos los transistores

 

SE20040 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SE20040
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 220 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 290 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.041 Ohm
   Paquete / Cubierta: TO220

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SE20040 Datasheet (PDF)

 ..1. Size:503K  cn sino-ic
se20040.pdf

SE20040
SE20040

SE20040N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V = 200VDSoperation voltage. This device is suitable for R =36.4m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline

 9.1. Size:42K  fairchild semi
kse200.pdf

SE20040
SE20040

KSE200Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.) Complement to KSE210TO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V

 9.2. Size:88K  samsung
kse200.pdf

SE20040
SE20040

KSE200POWER TRCD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. (C) 1994 Samsung ElectronicsPrinted in Korea.Page : 1 (KSE200)KSE200POWER TRCD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. (C) 1994 Samsung ElectronicsPrinted in Korea.Page : 2 (KSE200)

 9.4. Size:618K  cn sino-ic
se20075.pdf

SE20040
SE20040

SE20075N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V = 200VDSoperation voltage. This device is suitable for R =15.8m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline

 9.5. Size:765K  cn sino-ic
se200100g.pdf

SE20040
SE20040

SE200100GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent R with low gateDS(ON) V =200VDScharge. R =11m @V =10VDS(ON) GS High density cell design for ultra low RDS(ON) Excellent package for good heat dissipationPin configurationsSee Di

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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