SE3018 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SE3018
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 740 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
   Paquete / Cubierta: SOT323

Búsqueda de reemplazo de MOSFET SE3018

SE3018 Datasheet (PDF)

..1. Size:563K cn sino-ic
se3018.pdf

Apr 2015 SE3018 N-Channel Enhancement-Mode MOSFET Revision: A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V = 50V DSVoltage and Current Improved Shoot-Through R = 2.3 @ V =4.5 DS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount Device

9.1. Size:676K cn sino-ic
se30150.pdf

SE30150N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V =30VDSlow operation voltage. This device is R =2.3m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline

9.2. Size:371K cn sino-ic
se30150b.pdf

Dec 2014SE30150BN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =30VDSVoltage and Current Improved Shoot-Through R =1.6m @V =10 @I =30ADS(ON) GS DSFOM R =2.1m @V =4.5 @I =25ADS(ON) GS DS Simple Drive Requirement Sma

9.3. Size:535K cn sino-ic
se30100b.pdf

Jan 2015SE30100BN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent R with low gateDS(ON) V =30VDScharge. R =3m @V =10VDS(ON) GS High density cell design for ultra low RDS(ON) Excellent package for good heat dissipationPin configurations

9.4. Size:334K cn sino-ic
se30150a.pdf

Dec 2014SE30150AN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =30VDSVoltage and Current Improved Shoot-Through R =2.1m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin config

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: TMU7N60Z

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