SE3018 MOSFET Datasheet: N-Ch, 50V, 0.3A. Full specification with pinout and replacement list

SE3018 Specs and Replacement

Type Designator: SE3018

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 740 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: SOT323

SE3018 substitution

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SE3018 datasheet

..1. Size:563K cn sino-ic
se3018.pdf pdf_icon

Apr 2015 SE3018 N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V = 50V DS Voltage and Current Improved Shoot-Through R = 2.3 @ V =4.5 DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device... See More ⇒

9.1. Size:676K cn sino-ic
se30150.pdf pdf_icon

SE30150 N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and V =30V DS low operation voltage. This device is R =2.3m @V =10V DS(ON) GS suitable for using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline ... See More ⇒

9.2. Size:371K cn sino-ic
se30150b.pdf pdf_icon

Dec 2014 SE30150B N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =30V DS Voltage and Current Improved Shoot-Through R =1.6m @V =10 @I =30A DS(ON) GS DS FOM R =2.1m @V =4.5 @I =25A DS(ON) GS DS Simple Drive Requirement Sma... See More ⇒

9.3. Size:535K cn sino-ic
se30100b.pdf pdf_icon

Jan 2015 SE30100B N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent R with low gate DS(ON) V =30V DS charge. R =3m @V =10V DS(ON) GS High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations ... See More ⇒