SE3080G Todos los transistores

 ..1. Size:340K  cn sino-ic
 se3080g.pdf

SE3080G N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology For a single MOSFET and design to provide excellent RDS(ON) with V =30V DS low gate charge. It can be used in a wide R =4.5m @V =10V DS(ON) GS variety of application Pin configurations See Diagram below D D D D 5 6 7 8 1 2 3 4 S S S G DFN5*6

 8.1. Size:444K  cn sino-ic
 se3080a se3080k.pdf

SE3080A/K N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and low V =30V DS operation voltage. This device is suitable for R =4.5m @V =10V(SE3080A) DS(ON) GS using as a load switch or in PWM applications. R =4.5m @V =10V(SE3080K) DS(ON) GS Sim

 9.1. Size:993K  winsok
 wse3088.pdf

WSE3088 N-Ch MOSFET General Description Product Summery The WSE3088 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 30V 23m 7A for most of the synchronous buck converter applications . Applications The WSE3088 meet the RoHS and Green High Frequency Point-of-Load Synchronous s P

 9.2. Size:673K  cn sino-ic
 se3082g.pdf

SE3082G N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V = 30V DS Voltage and Current Improved Shoot-Through R = 5.0m @ V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations