SE3080G - аналоги, параметры транзистора - Справочник транзисторов

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SE3080G N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology For a single MOSFET and design to provide excellent RDS(ON) with V =30V DS low gate charge. It can be used in a wide R =4.5m @V =10V DS(ON) GS variety of application Pin configurations See Diagram below D D D D 5 6 7 8 1 2 3 4 S S S G DFN5*6

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SE3080A/K N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and low V =30V DS operation voltage. This device is suitable for R =4.5m @V =10V(SE3080A) DS(ON) GS using as a load switch or in PWM applications. R =4.5m @V =10V(SE3080K) DS(ON) GS Sim

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WSE3088 N-Ch MOSFET General Description Product Summery The WSE3088 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 30V 23m 7A for most of the synchronous buck converter applications . Applications The WSE3088 meet the RoHS and Green High Frequency Point-of-Load Synchronous s P

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SE3082G N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V = 30V DS Voltage and Current Improved Shoot-Through R = 5.0m @ V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations

Другие MOSFET... SE30150B , SE3018 , SE30200 , SE3050 , SE472 , SE3060D , SE3080A , SE3080K , MMIS60R580P , SE3082G , SE3090K , SE30P09D , SE30P12 , SE30P12D , SE30P50 , SE30P50B , SE3205A .