SE30P12D Todos los transistores

 

SE30P12D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SE30P12D
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16.5 nS
   Cossⓘ - Capacitancia de salida: 945 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: DFN3X3
 

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SE30P12D Datasheet (PDF)

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 se30p12d.pdf pdf_icon

SE30P12D

SE30P12DP-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = -30VDSoperation voltage. This device is suitable for R =11.5m @V =-10VDS(ON) GSusing as a load switch or in PWM applications. R =18m @V =-4.5VDS(ON) GS Simple Drive Re

 7.1. Size:359K  cn sino-ic
 se30p12.pdf pdf_icon

SE30P12D

Nov 2014SE30P12P-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = -30VDSoperation voltage. This device is suitable for R =11.5m @V =-10VDS(ON) GSusing as a load switch or in PWM applications. R =18m @V =-4.5VDS(ON) GS Simple

 9.1. Size:442K  cn sino-ic
 se30p50.pdf pdf_icon

SE30P12D

Jun 2015SE30P50P-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V = -30VDSVoltage and Current Improved Shoot-Through R =4.4m @V =-10 @I =-20ADS(ON) GS DFOM Simple Drive Requirement Small Package Outline Surface Mount Device

 9.2. Size:440K  cn sino-ic
 se30p09d.pdf pdf_icon

SE30P12D

Nov 2014SE30P09DP-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = -30VDSoperation voltage. This device is suitable for R = 15m @ V =-10VDS(ON) GSusing as a load switch or in PWM applications. R = 21m @ V =-4.5VDS(ON) GS Simpl

MOSTRAR MÁS

Otros transistores... SE3060D , SE3080A , SE3080K , SE3080G , SE3082G , SE3090K , SE30P09D , SE30P12 , IRFP064N , SE30P50 , SE30P50B , SE3205A , SE3401B , SE3N150P , SE40120A , SE40150 , SE40160A .

History: 2SK2702 | INJ0011AM1 | INJ0312AC1 | 8N80L-TF3-T | 2SK209 | CS5N70FA9

 

 
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