SE30P12D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SE30P12D
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 16.5 nS
   Cossⓘ - Capacitancia de salida: 945 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: DFN3X3

Búsqueda de reemplazo de MOSFET SE30P12D

SE30P12D Datasheet (PDF)

..1. Size:361K cn sino-ic
se30p12d.pdf

SE30P12DP-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = -30VDSoperation voltage. This device is suitable for R =11.5m @V =-10VDS(ON) GSusing as a load switch or in PWM applications. R =18m @V =-4.5VDS(ON) GS Simple Drive Re

7.1. Size:359K cn sino-ic
se30p12.pdf

Nov 2014SE30P12P-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = -30VDSoperation voltage. This device is suitable for R =11.5m @V =-10VDS(ON) GSusing as a load switch or in PWM applications. R =18m @V =-4.5VDS(ON) GS Simple

9.1. Size:442K cn sino-ic
se30p50.pdf

Jun 2015SE30P50P-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V = -30VDSVoltage and Current Improved Shoot-Through R =4.4m @V =-10 @I =-20ADS(ON) GS DFOM Simple Drive Requirement Small Package Outline Surface Mount Device

9.2. Size:440K cn sino-ic
se30p09d.pdf

Nov 2014SE30P09DP-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = -30VDSoperation voltage. This device is suitable for R = 15m @ V =-10VDS(ON) GSusing as a load switch or in PWM applications. R = 21m @ V =-4.5VDS(ON) GS Simpl

9.3. Size:367K cn sino-ic
se30p50b.pdf

Jun 2015SE30P50BP-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V = -30VDSVoltage and Current Improved Shoot-Through R =5.8m @V =-10DS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin conf

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: