All MOSFET. SE30P12D Datasheet

 

SE30P12D Datasheet and Replacement


   Type Designator: SE30P12D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 100 nC
   tr ⓘ - Rise Time: 16.5 nS
   Cossⓘ - Output Capacitance: 945 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: DFN3X3
 
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SE30P12D Datasheet (PDF)

 ..1. Size:361K  cn sino-ic
 se30p12d.pdf pdf_icon

SE30P12D

SE30P12DP-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = -30VDSoperation voltage. This device is suitable for R =11.5m @V =-10VDS(ON) GSusing as a load switch or in PWM applications. R =18m @V =-4.5VDS(ON) GS Simple Drive Re

 7.1. Size:359K  cn sino-ic
 se30p12.pdf pdf_icon

SE30P12D

Nov 2014SE30P12P-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = -30VDSoperation voltage. This device is suitable for R =11.5m @V =-10VDS(ON) GSusing as a load switch or in PWM applications. R =18m @V =-4.5VDS(ON) GS Simple

 9.1. Size:442K  cn sino-ic
 se30p50.pdf pdf_icon

SE30P12D

Jun 2015SE30P50P-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V = -30VDSVoltage and Current Improved Shoot-Through R =4.4m @V =-10 @I =-20ADS(ON) GS DFOM Simple Drive Requirement Small Package Outline Surface Mount Device

 9.2. Size:440K  cn sino-ic
 se30p09d.pdf pdf_icon

SE30P12D

Nov 2014SE30P09DP-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = -30VDSoperation voltage. This device is suitable for R = 15m @ V =-10VDS(ON) GSusing as a load switch or in PWM applications. R = 21m @ V =-4.5VDS(ON) GS Simpl

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Datasheet: SE3060D , SE3080A , SE3080K , SE3080G , SE3082G , SE3090K , SE30P09D , SE30P12 , IRFP064N , SE30P50 , SE30P50B , SE3205A , SE3401B , SE3N150P , SE40120A , SE40150 , SE40160A .

Keywords - SE30P12D MOSFET datasheet

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