SE30P50 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SE30P50 datasheet

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se30p50.pdf pdf_icon

Jun 2015 SE30P50 P-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V = -30V DS Voltage and Current Improved Shoot-Through R =4.4m @V =-10 @I =-20A DS(ON) GS D FOM Simple Drive Requirement Small Package Outline Surface Mount Device

0.1. Size:367K cn sino-ic
se30p50b.pdf pdf_icon

Jun 2015 SE30P50B P-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V = -30V DS Voltage and Current Improved Shoot-Through R =5.8m @V =-10 DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin conf

9.1. Size:359K cn sino-ic
se30p12.pdf pdf_icon

Nov 2014 SE30P12 P-Channel Enhancement-Mode MOSFET Revision A General Description Features Advanced trench technology to provide For a single MOSFET excellent RDS(ON), low gate charge and low V = -30V DS operation voltage. This device is suitable for R =11.5m @V =-10V DS(ON) GS using as a load switch or in PWM applications. R =18m @V =-4.5V DS(ON) GS Simple

9.2. Size:361K cn sino-ic
se30p12d.pdf pdf_icon

SE30P12D P-Channel Enhancement-Mode MOSFET Revision A General Description Features Advanced trench technology to provide For a single MOSFET excellent RDS(ON), low gate charge and low V = -30V DS operation voltage. This device is suitable for R =11.5m @V =-10V DS(ON) GS using as a load switch or in PWM applications. R =18m @V =-4.5V DS(ON) GS Simple Drive Re