Справочник MOSFET. SE30P50

 

SE30P50 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SE30P50
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 90 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 80 nC
   trⓘ - Время нарастания: 36 ns
   Cossⓘ - Выходная емкость: 898 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
   Тип корпуса: DFN5X6

 Аналог (замена) для SE30P50

 

 

SE30P50 Datasheet (PDF)

 ..1. Size:442K  cn sino-ic
 se30p50.pdf

SE30P50 SE30P50

Jun 2015SE30P50P-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V = -30VDSVoltage and Current Improved Shoot-Through R =4.4m @V =-10 @I =-20ADS(ON) GS DFOM Simple Drive Requirement Small Package Outline Surface Mount Device

 0.1. Size:367K  cn sino-ic
 se30p50b.pdf

SE30P50 SE30P50

Jun 2015SE30P50BP-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V = -30VDSVoltage and Current Improved Shoot-Through R =5.8m @V =-10DS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin conf

 9.1. Size:359K  cn sino-ic
 se30p12.pdf

SE30P50 SE30P50

Nov 2014SE30P12P-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = -30VDSoperation voltage. This device is suitable for R =11.5m @V =-10VDS(ON) GSusing as a load switch or in PWM applications. R =18m @V =-4.5VDS(ON) GS Simple

 9.2. Size:361K  cn sino-ic
 se30p12d.pdf

SE30P50 SE30P50

SE30P12DP-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = -30VDSoperation voltage. This device is suitable for R =11.5m @V =-10VDS(ON) GSusing as a load switch or in PWM applications. R =18m @V =-4.5VDS(ON) GS Simple Drive Re

 9.3. Size:440K  cn sino-ic
 se30p09d.pdf

SE30P50 SE30P50

Nov 2014SE30P09DP-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = -30VDSoperation voltage. This device is suitable for R = 15m @ V =-10VDS(ON) GSusing as a load switch or in PWM applications. R = 21m @ V =-4.5VDS(ON) GS Simpl

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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