SE60120GTS MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SE60120GTS datasheet

..1. Size:704K cn sino-ic
se60120gts.pdf pdf_icon

Dec 2014 SE60120GTS N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent R with low gate DS(ON) V = 60V DS charge. R = 3.0m @ V =10V DS(ON) GS High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configura

7.1. Size:509K cn sino-ic
se60120b.pdf pdf_icon

Dec 2014 SE60120B N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent R with low gate DS(ON) V =60V DS charge. R =4.1m @V =10V DS(ON) GS High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configuration

9.1. Size:461K cn sino-ic
se6016b.pdf pdf_icon

SE6016B N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =60V DS Voltage and Current Improved Shoot-Through R =23m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations Se

Otros transistores... SE47NS65TS , SE4942B , SE4946 , SE4953 , SE4N65 , SE540A , SE6003C , SE60120B , AON7408 , SE6016B , SE6020B , SE6020DB , SE60210GA , SE60300G , SE6050B , SE6080A , SE60P20B .