SE60120GTS Datasheet and Replacement
Type Designator: SE60120GTS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 1522 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO247S
SE60120GTS substitution
SE60120GTS Datasheet (PDF)
se60120gts.pdf

Dec 2014SE60120GTSN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent R with low gateDS(ON) V = 60VDScharge. R = 3.0m @ V =10VDS(ON) GS High density cell design for ultra low RDS(ON) Excellent package for good heat dissipationPin configura
se60120b.pdf

Dec 2014SE60120BN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent R with low gateDS(ON) V =60VDScharge. R =4.1m @V =10VDS(ON) GS High density cell design for ultra low RDS(ON) Excellent package for good heat dissipationPin configuration
se6016b.pdf

SE6016BN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =60VDSVoltage and Current Improved Shoot-Through R =23m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurationsSe
Datasheet: SE47NS65TS , SE4942B , SE4946 , SE4953 , SE4N65 , SE540A , SE6003C , SE60120B , 2N7000 , SE6016B , SE6020B , SE6020DB , SE60210GA , SE60300G , SE6050B , SE6080A , SE60P20B .
History: ZVP3306FTC | ZVP2106ASTOA | APT5026HVR | FQB9N50C | H5N2508DL | ZVP4525ZTA | ZVP2110GTA
Keywords - SE60120GTS MOSFET datasheet
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History: ZVP3306FTC | ZVP2106ASTOA | APT5026HVR | FQB9N50C | H5N2508DL | ZVP4525ZTA | ZVP2110GTA



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