FCB20N60 Todos los transistores

 ..1. Size:363K  fairchild semi
 fcb20n60 f085.pdf

November 2013 FCB20N60_F085 N-Channel MOSFET 600V, 20A, 198m D D Features Typ rDS(on) = 173m at VGS = 10V, ID = 20A Typ Qg(tot) = 72nC at VGS = 10V, ID = 20A G UIS Capability RoHS Compliant G Qualified to AEC Q101 S S Description SuperFETTM is Fairchild s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance For current packa

 ..2. Size:964K  fairchild semi
 fcb20n60.pdf

December 2008 TM SuperFET FCB20N60 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.15 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 75nC) lower gate charge performance.

 ..3. Size:498K  onsemi
 fcb20n60.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:354K  fairchild semi
 fcb20n60f f085.pdf

December 2013 FCB20N60F_F085 N-Channel MOSFET 600V, 20A, 190m D D Features Typ rDS(on) = 171m at VGS = 10V, ID = 20A Typ Qg(tot) = 78nC at VGS = 10V, ID = 20A G UIS Capability RoHS Compliant G Qualified to AEC Q101 S S Description SuperFETTM is Fairchild s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance For current pack

 0.2. Size:1144K  fairchild semi
 fcb20n60ftm.pdf

December 2008 TM SuperFET FCB20N60F 600V N-CHANNEL FRFET Features Description 650V @ TJ = 150 C SuperFETTM is,Fairchild' s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15 balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This a

 0.3. Size:956K  fairchild semi
 fcb20n60tm.pdf

December 2008 TM SuperFET FCB20N60 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.15 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 75nC) lower gate charge performance.

 0.4. Size:1152K  fairchild semi
 fcb20n60f.pdf

December 2008 TM SuperFET FCB20N60F 600V N-CHANNEL FRFET Features Description 650V @ TJ = 150 C SuperFETTM is,Fairchild' s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15 balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This a

 0.5. Size:486K  onsemi
 fcb20n60f.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur