FCB20N60 - параметры транзистора MOSFET, его аналоги, datasheet

FCB20N60 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: FCB20N60
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 208 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
   Тип корпуса: D2PAK

Аналог (замена) для FCB20N60

FCB20N60 Datasheet (PDF)

..1. Size:363K fairchild semi
fcb20n60 f085.pdf

November 2013FCB20N60_F085N-Channel MOSFET600V, 20A, 198m DDFeatures Typ rDS(on) = 173m at VGS = 10V, ID = 20A Typ Qg(tot) = 72nC at VGS = 10V, ID = 20AG UIS Capability RoHS CompliantG Qualified to AEC Q101 SSDescription SuperFETTM is Fairchilds proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance Forcurrentpacka

..2. Size:964K fairchild semi
fcb20n60.pdf

December 2008 TMSuperFETFCB20N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.15balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 75nC) lower gate charge performance.

..3. Size:498K onsemi
fcb20n60.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

0.1. Size:354K fairchild semi
fcb20n60f f085.pdf

December 2013FCB20N60F_F085N-Channel MOSFET600V, 20A, 190m DDFeatures Typ rDS(on) = 171m at VGS = 10V, ID = 20A Typ Qg(tot) = 78nC at VGS = 10V, ID = 20AG UIS Capability RoHS CompliantG Qualified to AEC Q101 SSDescription SuperFETTM is Fairchilds proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance Forcurrentpack

0.2. Size:1144K fairchild semi
fcb20n60ftm.pdf

December 2008 TMSuperFETFCB20N60F600V N-CHANNEL FRFETFeatures Description 650V @ TJ = 150C SuperFETTM is,Fairchild' s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This a

0.3. Size:956K fairchild semi
fcb20n60tm.pdf