SE6020B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SE6020B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.6 nS
Cossⓘ - Capacitancia de salida: 60 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de SE6020B MOSFET
- Selecciónⓘ de transistores por parámetros
SE6020B datasheet
se6020b.pdf
SE6020B N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =60V DS Voltage and Current Improved Shoot-Through R =14m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations Se
se6020db.pdf
SE6020DB N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =60V DS Voltage and Current Improved Shoot-Through R =24m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations S
se60210ga.pdf
Dec 2014 SE60210GA N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate VDS = 60V charge. RDS(ON) = 2.2m @ VGS=10V High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations
Otros transistores... SE4946 , SE4953 , SE4N65 , SE540A , SE6003C , SE60120B , SE60120GTS , SE6016B , STP75NF75 , SE6020DB , SE60210GA , SE60300G , SE6050B , SE6080A , SE60P20B , SE630K , SE6880A .
History: R6515ENJ | FQB19N20L | NCEP40T11G | BRCS9N20YU | 2SK3092D | SD5400CY | SVS20N60PND2
History: R6515ENJ | FQB19N20L | NCEP40T11G | BRCS9N20YU | 2SK3092D | SD5400CY | SVS20N60PND2
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Recientemente añadidas las descripciónes de los transistores:
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