SE6020B Datasheet and Replacement
Type Designator: SE6020B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 2.6 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO252
SE6020B substitution
SE6020B Datasheet (PDF)
se6020b.pdf

SE6020BN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =60VDSVoltage and Current Improved Shoot-Through R =14m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurationsSe
se6020db.pdf

SE6020DBN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =60VDSVoltage and Current Improved Shoot-Through R =24m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurationsS
se60210ga.pdf

Dec 2014 SE60210GA N-Channel Enhancement-Mode MOSFET Revision: A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate VDS = 60V charge. RDS(ON) = 2.2m @ VGS=10V High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations
Datasheet: SE4946 , SE4953 , SE4N65 , SE540A , SE6003C , SE60120B , SE60120GTS , SE6016B , 12N60 , SE6020DB , SE60210GA , SE60300G , SE6050B , SE6080A , SE60P20B , SE630K , SE6880A .
Keywords - SE6020B MOSFET datasheet
SE6020B cross reference
SE6020B equivalent finder
SE6020B lookup
SE6020B substitution
SE6020B replacement
History: SI4622DY | VBZL80N03



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