2SK3057 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3057SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION This product is N-Channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching application.2SK3057 Isolated TO-220FEATURES Low on-state resistanceRDS(on)1 = 17 m MAX. (VGS = 10 V, ID = 23 A)RDS(on)2 = 27 m MA

isc N-Channel MOSFET Transistor 2SK3057FEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 17m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3055SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION This product is N-Channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK3055 Isolated TO-220FEATURES Low On-State ResistanceRDS(on)1 = 34 m MAX. (VGS = 10 V, ID = 15 A) (Isolated TO-220)

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3058SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION This product is N-Channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK3058 TO-220AB2SK3058-S TO-262FEATURES Super Low On-State Resistance 2SK3058-ZJ TO-263RDS(on)1 = 17 m MAX. (VGS = 10

2SK3051 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3051 Chopper Regulator DC-DC Converter, and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 24 m (typ.) High forward transfer admittance : |Yfs| = 27 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 50 V) Enhancement mode : Vth = 1.5~3.0 V (VDS = 1

201041NEC

Preliminary Data Sheet 2SK3054C R07DS1285EJ0200Rev.2.00N-CHANNEL MOSFET FOR SWITCHING Jul 16, 2015Description The 2SK3054C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features Directly driven by a 4.5 V power source. Low on-state resistance RDS(on)1 = 2.7 MAX. (VGS = 10

SMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type ICSMD Type TransistorsProduct specification2SK3050TO-252Unit: mmFeatures6.50+0.15 2.30+0.1-0.15 -0.1+0.25.30-0.2 0.50+0.8-0.7Low on-resistance.Fast switching speed.Wide SOA (safe operating area).0.1270.80+0.1 max-0.1Gate-source voltage (VGSS) gua

isc N-Channel MOSFET Transistor 2SK3055FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 34m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3051BFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V =50V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3050FEATURESDrain Current : I =2A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R =5.5(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

isc N-Channel MOSFET Transistor 2SK3058-ZJFEATURESDrain Current : I = 55A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 17m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK3051KFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V =50V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3058FEATURESDrain Current : I = 55A@ T =25D CDrain Source Voltage: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 17m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3058-SFEATURESDrain Current : I = 55A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 17m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi