2SK3057 Spec and Replacement
Type Designator: 2SK3057
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 45
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017
Ohm
Package:
TO220
2SK3057 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3057 Specs
..1. Size:61K nec
2sk3057.pdf 
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3057 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching application. 2SK3057 Isolated TO-220 FEATURES Low on-state resistance RDS(on)1 = 17 m MAX. (VGS = 10 V, ID = 23 A) RDS(on)2 = 27 m MA... See More ⇒
..2. Size:279K inchange semiconductor
2sk3057.pdf 
isc N-Channel MOSFET Transistor 2SK3057 FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 17m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
8.1. Size:70K 1
2sk3055.pdf 
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3055 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3055 Isolated TO-220 FEATURES Low On-State Resistance RDS(on)1 = 34 m MAX. (VGS = 10 V, ID = 15 A) (Isolated TO-220) ... See More ⇒
8.2. Size:76K 1
2sk3058.pdf 
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3058 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3058 TO-220AB 2SK3058-S TO-262 FEATURES Super Low On-State Resistance 2SK3058-ZJ TO-263 RDS(on)1 = 17 m MAX. (VGS = 10 ... See More ⇒
8.3. Size:179K toshiba
2sk3051.pdf 
2SK3051 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3051 Chopper Regulator DC-DC Converter, and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 24 m (typ.) High forward transfer admittance Yfs = 27 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 50 V) Enhancement mode Vth = 1.5 3.0 V (VDS = 1... See More ⇒
8.5. Size:98K renesas
2sk3054c.pdf 
Preliminary Data Sheet 2SK3054C R07DS1285EJ0200 Rev.2.00 N-CHANNEL MOSFET FOR SWITCHING Jul 16, 2015 Description The 2SK3054C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features Directly driven by a 4.5 V power source. Low on-state resistance RDS(on)1 = 2.7 MAX. (VGS = 10... See More ⇒
8.6. Size:185K tysemi
2sk3050.pdf 
SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors Product specification 2SK3050 TO-252 Unit mm Features 6.50+0.15 2.30+0.1 -0.15 -0.1 +0.2 5.30-0.2 0.50+0.8 -0.7 Low on-resistance. Fast switching speed. Wide SOA (safe operating area). 0.127 0.80+0.1 max -0.1 Gate-source voltage (VGSS) gua... See More ⇒
8.7. Size:280K inchange semiconductor
2sk3055.pdf 
isc N-Channel MOSFET Transistor 2SK3055 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 34m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
8.8. Size:356K inchange semiconductor
2sk3051b.pdf 
isc N-Channel MOSFET Transistor 2SK3051B FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V =50V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
8.9. Size:286K inchange semiconductor
2sk3050.pdf 
isc N-Channel MOSFET Transistor 2SK3050 FEATURES Drain Current I =2A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R =5.5 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr... See More ⇒
8.10. Size:357K inchange semiconductor
2sk3058-zj.pdf 
isc N-Channel MOSFET Transistor 2SK3058-ZJ FEATURES Drain Current I = 55A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 17m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
8.11. Size:282K inchange semiconductor
2sk3051k.pdf 
isc N-Channel MOSFET Transistor 2SK3051K FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V =50V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
8.12. Size:289K inchange semiconductor
2sk3058.pdf 
isc N-Channel MOSFET Transistor 2SK3058 FEATURES Drain Current I = 55A@ T =25 D C Drain Source Voltage V =60V(Min) DSS Static Drain-Source On-Resistance R = 17m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒
8.13. Size:283K inchange semiconductor
2sk3058-s.pdf 
isc N-Channel MOSFET Transistor 2SK3058-S FEATURES Drain Current I = 55A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 17m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
Detailed specifications: FQP10N60C
, FQPF10N60C
, FCA47N60F
, FCA76N60N
, 2SJ245
, FCB11N60
, 2SK3653
, FCB20N60
, IRF640N
, 2SK3469-01MR
, FCB20N60F
, FCB36N60N
, 2SJ279
, FCD4N60
, IRFD9020
, FCD5N60
, STU9916L
.
History: JMCL0410AUD
| DHSJ25N65F
Keywords - 2SK3057 MOSFET specs
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2SK3057 equivalent finder
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