SE80250G Todos los transistores

 

SE80250G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SE80250G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 312.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 250 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 24.2 nS
   Cossⓘ - Capacitancia de salida: 51 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

SE80250G Datasheet (PDF)

 ..1. Size:296K  cn sino-ic
 se80250g.pdf pdf_icon

SE80250G

SE80250GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =80VDSVoltage and Current Improved Shoot-Through R =2.0m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurations

 9.1. Size:169K  onsemi
 kse800 kse801 kse802 kse803.pdf pdf_icon

SE80250G

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRFSL3107PBF | MTN50N06E3 | SM3116NAF | STD50NH02L-1 | IPI051N15N5 | SSFT4004 | CPC3730

 

 
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