SE80250G MOSFET. Datasheet pdf. Equivalent
Type Designator: SE80250G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 312.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 250 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 186.3 nC
Rise Time (tr): 24.2 nS
Drain-Source Capacitance (Cd): 51 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0025 Ohm
Package: TO220
SE80250G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SE80250G Datasheet (PDF)
se80250g.pdf
SE80250GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =80VDSVoltage and Current Improved Shoot-Through R =2.0m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurations
kse800 kse801 kse802 kse803.pdf
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