SED3022M Todos los transistores

 

SED3022M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SED3022M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 102 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: DFN3X3M
 

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SED3022M Datasheet (PDF)

 ..1. Size:465K  cn sino-ic
 sed3022m.pdf pdf_icon

SED3022M

SED3022MDual N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent RDS(ON) with low gate V =30VDScharge. It can be used in a wide variety of application R =16m@V =10VDS(ON) GSPin configurationsSee Diagram belowDFN3x3MAbsolute Maximum RatingsParame

 9.1. Size:430K  cn sino-ic
 sed3032g.pdf pdf_icon

SED3022M

SED3032GDual N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =30VDSVoltage and Current Improved Shoot-Through R =7.4m@V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configuratio

 9.2. Size:494K  cn sino-ic
 sed3030m.pdf pdf_icon

SED3022M

SED3030MN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent RDS(ON) with low gate V =30VDScharge. It can be used in a wide variety of application R =7.4m@V =10VDS(ON) GSPin configurationsSee Diagram belowAbsolute Maximum RatingsParameter Symbol Ra

 9.3. Size:364K  cn sino-ic
 sed3080m.pdf pdf_icon

SED3022M

SED3080MN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent RDS(ON) with low gate V =30VDScharge. It can be used in a wide variety of application R =4.5m@V =10VDS(ON) GSPin configurationsSee Diagram belowAbsolute Maximum RatingsParameter Symbol Ra

MOSTRAR MÁS

Otros transistores... SE8841A , SE8N65A , SE9435 , SE9926 , SED10070GG , SED10080GG , SED14N65G , SED2145 , IRFZ24N , SED3030M , SED3032G , SED3080M , SED3081M , SED30P30M , SED4060G , SED4060GM , SED5852 .

History: SM4309PSKP | AP16N50P-HF

 

 
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