SED3022M
MOSFET. Datasheet pdf. Equivalent
Type Designator: SED3022M
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 36
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 17.5
nC
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 102
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02
Ohm
Package: DFN3X3M
SED3022M
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SED3022M
Datasheet (PDF)
..1. Size:465K cn sino-ic
sed3022m.pdf 
SED3022MDual N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent RDS(ON) with low gate V =30VDScharge. It can be used in a wide variety of application R =16m@V =10VDS(ON) GSPin configurationsSee Diagram belowDFN3x3MAbsolute Maximum RatingsParame
9.1. Size:430K cn sino-ic
sed3032g.pdf
SED3032GDual N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =30VDSVoltage and Current Improved Shoot-Through R =7.4m@V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configuratio
9.2. Size:494K cn sino-ic
sed3030m.pdf
SED3030MN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent RDS(ON) with low gate V =30VDScharge. It can be used in a wide variety of application R =7.4m@V =10VDS(ON) GSPin configurationsSee Diagram belowAbsolute Maximum RatingsParameter Symbol Ra
9.3. Size:364K cn sino-ic
sed3080m.pdf
SED3080MN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent RDS(ON) with low gate V =30VDScharge. It can be used in a wide variety of application R =4.5m@V =10VDS(ON) GSPin configurationsSee Diagram belowAbsolute Maximum RatingsParameter Symbol Ra
9.4. Size:357K cn sino-ic
sed30p30m.pdf
Sep 2015SED30P30MP-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = -30VDSoperation voltage. This device is suitable for R =8.5m @V =-10VDS(ON) GSusing as a load switch or in PWM applications. Simple Drive Requirement Small Packa
9.5. Size:364K cn sino-ic
sed3081m.pdf
SED3081MN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent RDS(ON) with low gate V =30VDScharge. It can be used in a wide variety of application R =5.4m@V =10VDS(ON) GSPin configurationsSee Diagram belowAbsolute Maximum RatingsParameter Symbol Ra
Datasheet: WPB4002
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