SED3030M Todos los transistores

 

SED3030M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SED3030M

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 102 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm

Encapsulados: DFN3X3EP

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SED3030M datasheet

 ..1. Size:494K  cn sino-ic
 sed3030m.pdf pdf_icon

SED3030M

SED3030M N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate V =30V DS charge. It can be used in a wide variety of application R =7.4m @V =10V DS(ON) GS Pin configurations See Diagram below Absolute Maximum Ratings Parameter Symbol Ra

 8.1. Size:430K  cn sino-ic
 sed3032g.pdf pdf_icon

SED3030M

SED3032G Dual N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =30V DS Voltage and Current Improved Shoot-Through R =7.4m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configuratio

 9.1. Size:465K  cn sino-ic
 sed3022m.pdf pdf_icon

SED3030M

SED3022M Dual N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate V =30V DS charge. It can be used in a wide variety of application R =16m @V =10V DS(ON) GS Pin configurations See Diagram below DFN3x3M Absolute Maximum Ratings Parame

 9.2. Size:364K  cn sino-ic
 sed3080m.pdf pdf_icon

SED3030M

SED3080M N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate V =30V DS charge. It can be used in a wide variety of application R =4.5m @V =10V DS(ON) GS Pin configurations See Diagram below Absolute Maximum Ratings Parameter Symbol Ra

MOSTRAR MÁS

Otros transistores... SE8N65A , SE9435 , SE9926 , SED10070GG , SED10080GG , SED14N65G , SED2145 , SED3022M , IRFZ24N , SED3032G , SED3080M , SED3081M , SED30P30M , SED4060G , SED4060GM , SED5852 , SED8830A .

History: ME2333-G | SI2324DS

 

 

 

 

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