SED3030M - аналоги, параметры транзистора - Справочник транзисторов

SED3030M даташит

..1. Size:494K cn sino-ic
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SED3030M N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate V =30V DS charge. It can be used in a wide variety of application R =7.4m @V =10V DS(ON) GS Pin configurations See Diagram below Absolute Maximum Ratings Parameter Symbol Ra

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sed3032g.pdf pdf_icon

SED3032G Dual N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =30V DS Voltage and Current Improved Shoot-Through R =7.4m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configuratio

9.1. Size:465K cn sino-ic
sed3022m.pdf pdf_icon

SED3022M Dual N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate V =30V DS charge. It can be used in a wide variety of application R =16m @V =10V DS(ON) GS Pin configurations See Diagram below DFN3x3M Absolute Maximum Ratings Parame

9.2. Size:364K cn sino-ic
sed3080m.pdf pdf_icon

SED3080M N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate V =30V DS charge. It can be used in a wide variety of application R =4.5m @V =10V DS(ON) GS Pin configurations See Diagram below Absolute Maximum Ratings Parameter Symbol Ra