SED3080M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SED3080M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 83 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 80 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 51 nC
Tiempo de subida (tr): 15 nS
Conductancia de drenaje-sustrato (Cd): 460 pF
Resistencia entre drenaje y fuente RDS(on): 0.0065 Ohm
Paquete / Cubierta: DFN3X3EP
Búsqueda de reemplazo de MOSFET SED3080M
SED3080M Datasheet (PDF)
sed3080m.pdf
SED3080MN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent RDS(ON) with low gate V =30VDScharge. It can be used in a wide variety of application R =4.5m@V =10VDS(ON) GSPin configurationsSee Diagram belowAbsolute Maximum RatingsParameter Symbol Ra
sed3081m.pdf
SED3081MN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent RDS(ON) with low gate V =30VDScharge. It can be used in a wide variety of application R =5.4m@V =10VDS(ON) GSPin configurationsSee Diagram belowAbsolute Maximum RatingsParameter Symbol Ra
sed3022m.pdf
SED3022MDual N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent RDS(ON) with low gate V =30VDScharge. It can be used in a wide variety of application R =16m@V =10VDS(ON) GSPin configurationsSee Diagram belowDFN3x3MAbsolute Maximum RatingsParame
sed3032g.pdf
SED3032GDual N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =30VDSVoltage and Current Improved Shoot-Through R =7.4m@V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configuratio
sed3030m.pdf
SED3030MN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent RDS(ON) with low gate V =30VDScharge. It can be used in a wide variety of application R =7.4m@V =10VDS(ON) GSPin configurationsSee Diagram belowAbsolute Maximum RatingsParameter Symbol Ra
sed30p30m.pdf
Sep 2015SED30P30MP-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = -30VDSoperation voltage. This device is suitable for R =8.5m @V =-10VDS(ON) GSusing as a load switch or in PWM applications. Simple Drive Requirement Small Packa
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