SED3080M Todos los transistores

 ..1. Size:364K  cn sino-ic
 sed3080m.pdf

SED3080M N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate V =30V DS charge. It can be used in a wide variety of application R =4.5m @V =10V DS(ON) GS Pin configurations See Diagram below Absolute Maximum Ratings Parameter Symbol Ra

 8.1. Size:364K  cn sino-ic
 sed3081m.pdf

SED3081M N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate V =30V DS charge. It can be used in a wide variety of application R =5.4m @V =10V DS(ON) GS Pin configurations See Diagram below Absolute Maximum Ratings Parameter Symbol Ra

 9.1. Size:465K  cn sino-ic
 sed3022m.pdf

SED3022M Dual N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate V =30V DS charge. It can be used in a wide variety of application R =16m @V =10V DS(ON) GS Pin configurations See Diagram below DFN3x3M Absolute Maximum Ratings Parame

 9.2. Size:430K  cn sino-ic
 sed3032g.pdf

SED3032G Dual N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =30V DS Voltage and Current Improved Shoot-Through R =7.4m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configuratio

 9.3. Size:494K  cn sino-ic
 sed3030m.pdf

SED3030M N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate V =30V DS charge. It can be used in a wide variety of application R =7.4m @V =10V DS(ON) GS Pin configurations See Diagram below Absolute Maximum Ratings Parameter Symbol Ra

 9.4. Size:357K  cn sino-ic
 sed30p30m.pdf

Sep 2015 SED30P30M P-Channel Enhancement-Mode MOSFET Revision A General Description Features Advanced trench technology to provide For a single MOSFET excellent RDS(ON), low gate charge and low V = -30V DS operation voltage. This device is suitable for R =8.5m @V =-10V DS(ON) GS using as a load switch or in PWM applications. Simple Drive Requirement Small Packa