SED3080M Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SED3080M
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 83 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 460 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
Тип корпуса: DFN3X3EP
Аналог (замена) для SED3080M
SED3080M Datasheet (PDF)
sed3080m.pdf

SED3080MN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent RDS(ON) with low gate V =30VDScharge. It can be used in a wide variety of application R =4.5m@V =10VDS(ON) GSPin configurationsSee Diagram belowAbsolute Maximum RatingsParameter Symbol Ra
sed3081m.pdf

SED3081MN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent RDS(ON) with low gate V =30VDScharge. It can be used in a wide variety of application R =5.4m@V =10VDS(ON) GSPin configurationsSee Diagram belowAbsolute Maximum RatingsParameter Symbol Ra
sed3022m.pdf

SED3022MDual N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent RDS(ON) with low gate V =30VDScharge. It can be used in a wide variety of application R =16m@V =10VDS(ON) GSPin configurationsSee Diagram belowDFN3x3MAbsolute Maximum RatingsParame
sed3032g.pdf

SED3032GDual N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =30VDSVoltage and Current Improved Shoot-Through R =7.4m@V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configuratio
Другие MOSFET... SE9926 , SED10070GG , SED10080GG , SED14N65G , SED2145 , SED3022M , SED3030M , SED3032G , K2611 , SED3081M , SED30P30M , SED4060G , SED4060GM , SED5852 , SED8830A , SED8840 , APM2300CA .
History: 2SK1733 | PMN40ENA | CMPFJ310 | SVS80R280FJDE3 | CS6661 | NVTR4502P
History: 2SK1733 | PMN40ENA | CMPFJ310 | SVS80R280FJDE3 | CS6661 | NVTR4502P



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