SED3081M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SED3081M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 460 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
Paquete / Cubierta: DFN3X3
Búsqueda de reemplazo de MOSFET SED3081M
SED3081M Datasheet (PDF)
sed3081m.pdf
SED3081MN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent RDS(ON) with low gate V =30VDScharge. It can be used in a wide variety of application R =5.4m@V =10VDS(ON) GSPin configurationsSee Diagram belowAbsolute Maximum RatingsParameter Symbol Ra
sed3080m.pdf
SED3080MN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent RDS(ON) with low gate V =30VDScharge. It can be used in a wide variety of application R =4.5m@V =10VDS(ON) GSPin configurationsSee Diagram belowAbsolute Maximum RatingsParameter Symbol Ra
sed3022m.pdf
SED3022MDual N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent RDS(ON) with low gate V =30VDScharge. It can be used in a wide variety of application R =16m@V =10VDS(ON) GSPin configurationsSee Diagram belowDFN3x3MAbsolute Maximum RatingsParame
sed3032g.pdf
SED3032GDual N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =30VDSVoltage and Current Improved Shoot-Through R =7.4m@V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configuratio
sed3030m.pdf
SED3030MN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent RDS(ON) with low gate V =30VDScharge. It can be used in a wide variety of application R =7.4m@V =10VDS(ON) GSPin configurationsSee Diagram belowAbsolute Maximum RatingsParameter Symbol Ra
sed30p30m.pdf
Sep 2015SED30P30MP-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = -30VDSoperation voltage. This device is suitable for R =8.5m @V =-10VDS(ON) GSusing as a load switch or in PWM applications. Simple Drive Requirement Small Packa
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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