SM4512NHKP Todos los transistores

SM4512NHKP N-Channel Enhancement Mode MOSFET Features Pin Description 30V/80A, D D D RDS(ON)= 1.9m (Max.) @ VGS=10V D RDS(ON)= 3m (Max.) @ VGS=4.5V 100% UIS + Rg Tested G Pin 1 S S S Reliable and Rugged DFN5x6A-8_EP Lower Qg and Qgd for high-speed switching (5,6,7,8) Lower RDS(ON) to Minimize Conduction Losses DDDD Lead Free and Green Devices Available (RoHS

TSM4513D Complementary Enhancement MOSFET SOP-8 Pin Definition MOSFET PRODUCT SUMMARY 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m ) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 14 @ VGS = 4.5V 6 4. Gate 2 5. Drain 2 N-Channel 20 16 @ VGS = 2.5V 4 18 @ VGS = -4.5V -6 P-Channel -20 25 @ VGS = -2.5V -4 Block Diagram Features Low RDS(ON) Provides

SM4513NHKP N-Channel Enhancement Mode MOSFET Features Pin Description 30V/70A, D D D RDS(ON)= 2.7m (Max.) @ VGS=10V D RDS(ON)= 3.5m (Max.) @ VGS=4.5V Reliable and Rugged G Pin 1 S S S Lower Qg and Qgd for high-speed switching DFN5x6A-8_EP Lower RDS(ON) to Minimize Conduction Losses (5,6,7,8) 100% UIS + Rg Tested DDDD Lead Free and Green Devices Available (RoH

SM4514NHKP N-Channel Enhancement Mode MOSFET Features Pin Description 30V/70A, D D D RDS(ON)=3.4m (Max.) @ VGS=10V D RDS(ON)=5.5m (Max.) @ VGS=4.5V Reliable and Rugged G Pin 1 S S S Lower Qg and Qgd for high-speed switching DFN5x6A-8_EP Lower RDS(ON) to Minimize Conduction Losses (5,6,7,8) Lead Free and Green Devices Available DDDD (RoHS Compliant) Ap

GSM4516W 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4516W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=15m @VGS=10V provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m @VGS=4.5V P-Channel These devices are particularly suited for low -30V/-8A,RDS(ON)=28m @VGS=-10V voltag

GSM4516 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4516, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=15m @VGS=10V provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m @VGS=4.5V P-Channel These devices are particularly suited for low -30V/-8A,RDS(ON)=28m @VGS=-10V voltage power man

GSM4510S 100V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4510S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 100V/6.8A,RDS(ON)=150m @VGS=10V provide excellent RDS(ON), low gate charge. 100V/5.6A,RDS(ON)=165m @VGS=4.5V P-Channel These devices are particularly suited for low -100V/-6.2A,RDS(ON)=198m @VGS=

SSM4513M/GM N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement N-CH BV 35V D2 DSS D2 Low on-resistance R 36m D1 DS(ON) D1 Fast switching performance ID 5.8A G2 P-CH BVDSS -35V S2 G1 SO-8 S1 RDS(ON) 68m Description ID -4.3A Advanced Power MOSFETs from Silicon Standard provide the D2 D1 designer with the best combination of fast switching, rugge