SM4512NHKP
MOSFET. Datasheet pdf. Equivalent
Type Designator: SM4512NHKP
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 78
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 80
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 44.5
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 1910
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0019
Ohm
Package: DFN5X6A-8-EP
SM4512NHKP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM4512NHKP
Datasheet (PDF)
..1. Size:267K sino
sm4512nhkp.pdf 
SM4512NHKP N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/80A,DDD RDS(ON)= 1.9m (Max.) @ VGS=10VD RDS(ON)= 3m (Max.) @ VGS=4.5V 100% UIS + Rg TestedGPin 1SSS Reliable and RuggedDFN5x6A-8_EP Lower Qg and Qgd for high-speed switching(5,6,7,8) Lower RDS(ON) to Minimize Conduction LossesDDDD Lead Free and Green Devices Available (RoHS
9.1. Size:192K taiwansemi
tsm4513dcs.pdf
TSM4513D Complementary Enhancement MOSFET SOP-8 Pin Definition: MOSFET PRODUCT SUMMARY 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 14 @ VGS = 4.5V 6 4. Gate 2 5. Drain 2 N-Channel 20 16 @ VGS = 2.5V 4 18 @ VGS = -4.5V -6 P-Channel -20 25 @ VGS = -2.5V -4 Block Diagram Features Low RDS(ON) Provides
9.2. Size:266K sino
sm4513nhkp.pdf
SM4513NHKP N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/70A,DDD RDS(ON)= 2.7m (Max.) @ VGS=10VD RDS(ON)= 3.5m (Max.) @ VGS=4.5V Reliable and RuggedGPin 1SSS Lower Qg and Qgd for high-speed switchingDFN5x6A-8_EP Lower RDS(ON) to Minimize Conduction Losses(5,6,7,8) 100% UIS + Rg TestedDDDD Lead Free and Green Devices Available(RoH
9.3. Size:172K sino
sm4514nhkp.pdf
SM4514NHKP N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/70A,DDD RDS(ON)=3.4m (Max.) @ VGS=10VD RDS(ON)=5.5m (Max.) @ VGS=4.5V Reliable and RuggedGPin 1SSS Lower Qg and Qgd for high-speed switchingDFN5x6A-8_EP Lower RDS(ON) to Minimize Conduction Losses(5,6,7,8) Lead Free and Green Devices AvailableDDDD(RoHS Compliant)Ap
9.4. Size:1190K globaltech semi
gsm4516w.pdf
GSM4516W 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4516W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=15m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m@VGS=4.5V P-Channel These devices are particularly suited for low -30V/-8A,RDS(ON)=28m@VGS=-10V voltag
9.5. Size:1304K globaltech semi
gsm4516.pdf
GSM4516 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4516, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=15m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m@VGS=4.5V P-Channel These devices are particularly suited for low -30V/-8A,RDS(ON)=28m@VGS=-10V voltage power man
9.6. Size:1077K globaltech semi
gsm4510s.pdf
GSM4510S 100V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4510S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 100V/6.8A,RDS(ON)=150m@VGS=10V provide excellent RDS(ON), low gate charge. 100V/5.6A,RDS(ON)=165m@VGS=4.5V P-Channel These devices are particularly suited for low -100V/-6.2A,RDS(ON)=198m@VGS=
9.7. Size:337K silicon standard
ssm4513m.pdf
SSM4513M/GMN AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement N-CH BV 35VD2 DSSD2Low on-resistance R 36mD1DS(ON)D1Fast switching performance ID 5.8AG2P-CH BVDSS -35VS2 G1SO-8 S1RDS(ON) 68mDescription ID -4.3AAdvanced Power MOSFETs from Silicon Standard provide theD2D1designer with the best combination of fast switching, rugge
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