2SK2341 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK2341
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 420 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
   Paquete / Cubierta: TO220F

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2SK2341 Datasheet (PDF)

..1. Size:73K 1
2sk2341.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2341SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2341 is N-channel Power MOS Field Effect Transis-(in millimeters)tor designed for high voltage switching applications.10.0 0.3 4.5 0.23.2 0.2FEATURES2.7 0.2 Low On-state ResistanceRDS(on) = 0.26 MAX. (VGS = 10 V, ID =

8.1. Size:55K sanyo
2sk2348.pdf

Ordering number : EN5415AN-Channel Silicon MOSFET2SK2348High-Voltage, High-SpeedSwitching ApplicationsFeaturesPackage Dimensions Low ON resistance, ultrahigh-speed switching.unit: mm High reliability (Adoption of HVP process).2131-TO-3JML[2SK2348]1 : Gate2 : Drain3 : SourceSANYO: TO-3JMLSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol

8.2. Size:54K sanyo
2sk2349.pdf

Ordering number : EN5315AN-Channel Silicon MOSFET2SK2349High-Voltage, High-SpeedSwitching ApplicationsFeaturesPackage Dimensions Low ON resistance, ultrahigh-speed switching.unit: mm High reliability (Adoption of HVP process).2131-TO-3JML[2SK2349]1 : Gate2 : Drain3 : SourceSANYO: TO-3JMLSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol

8.3. Size:55K sanyo
2sk2347.pdf

Ordering number : EN5424AN-Channel Silicon MOSFET2SK2347High-Voltage, High-SpeedSwitching ApplicationsFeaturesPackage Dimensions Low ON resistance, ultrahigh-speed switching.unit: mm High reliability (Adoption of HVP process).2131-TO-3JML[2SK2347]1 : Gate2 : Drain3 : SourceSANYO: TO-3JMLSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol

8.4. Size:31K panasonic
2sk2340.pdf

Power F-MOS FETs 2SK23402SK2340Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.29.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor drive5.08 0.4Control equipm

8.5. Size:24K panasonic
2sk2342.pdf

Power F-MOS FETs 2SK23422SK2342Silicon N-Channel MOSUnit : mmFor motor drive6.5 0.1For DC-DC converter5.3 0.14.35 0.13.0 0.1 FeaturesLow ON-resistance RDS(on)High-speed switching1.0 0.10.85 0.1 0.75 0.1 0.5 0.14.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25C)Parameter Symbol Rating Unit1 : Gate1 2 32 : DrainDrain-Source breakd

Otros transistores... 2SK2141 , 2SK2157 , 2SK2158 , 2SK2159 , 2SK2207 , 2SK2208 , 2SK2234 , 2SK2275 , STF13NM60N , 2SK2409 , 2SK2410 , 2SK2411 , 2SK2412 , 2SK2413 , 2SK2414 , 2SK2415 , 2SK2419 .

Liste

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