VS3622AE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: VS3622AE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: PDFN3333

Búsqueda de reemplazo de MOSFET VS3622AE

VS3622AE Datasheet (PDF)

..1. Size:627K cn vanguard
vs3622ae.pdf

VS3622AE 30V/45A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 7.9 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 12 m Enhancement mode I D 45 A Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching PDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part ID Package

..2. Size:970K cn vgsemi
vs3622ae.pdf

VS3622AE30V/45A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 7.9 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 12 m Enhancement modeI D 45 A Low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3622AE

7.1. Size:1105K cn vgsemi
vs3622aa4.pdf

VS3622AA430V/9.2A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 8.7 m N-ChannelR DS(on),TYP@ VGS=4.5 V 12 m Enhancement modeI D(Silicon Limited) 9.2 A Fast Switching and High efficiencyDFN2x2x0.5-6LPart ID Package Type Marking PackingVS3622AA4 DFN2x2x0.5-6L 3622AA 3000PCS/ReelMaximum ratings, at TA =25C, unless otherwise specif

7.2. Size:966K cn vgsemi
vs3622aa.pdf

VS3622AA30V/13A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 8.8 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 13 m Enhancement modeI D 13 A Low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingDFN2x2x0.75-6L Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3622AA DFN2x2x0.75-6L 3622

7.3. Size:977K cn vgsemi
vs3622ad.pdf

VS3622AD30V/55A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 8 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 12 m Enhancement modeI D 55 A Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching TO-252 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3622ADTO-2

7.4. Size:995K cn vgsemi
vs3622ap.pdf

VS3622AP30V/50A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 7.4 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 11 m Low on-resistance RDS(on) @ VGS=4.5 VI D 50 A 100% Avalanche testPDFN5x6 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3622AP PDFN5x6 3622AP 3000PCS/ReelMaximum ratings, at TA =25C, u

7.5. Size:1001K cn vgsemi
vs3622as.pdf

VS3622AS30V/15A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 8.4 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 12 m Enhancement modeI D 15 A Low on-resistance RDS(on) @ VGS=4.5 V 100% Avalanche testSOP8 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3622AS SOP8 3622AS 3000PCS/Reel

7.6. Size:959K cn vgsemi
vs3622aa2.pdf

VS3622AA230V/13A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 8.8 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 13 m Enhancement modeI D 13 A Low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingDFN2x2x0.45-6L Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3622AA2 DFN2x2x0.45-6L 36

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: