VS4020AP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VS4020AP
Código: 4020AP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 45 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 80 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 63 nC
Tiempo de subida (tr): 8 nS
Conductancia de drenaje-sustrato (Cd): 300 pF
Resistencia entre drenaje y fuente RDS(on): 0.006 Ohm
Paquete / Cubierta: PDFN5X6
Búsqueda de reemplazo de MOSFET VS4020AP
VS4020AP Datasheet (PDF)
vs4020ap.pdf
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VS4020AP 40V/80A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 4.5 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 5.5 m Enhancement mode I D 80 A Very low on-resistance RDS(on) @ VGS=4.5 V 100% Avalanche test PDFN5x6 Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking i
vs4020as.pdf
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VS4020AS 40V/18A N-Channel Advanced Power MOSFET Features V DS 40 V Low On-Resistance R DS(on),TYP@ VGS=10 V 6.0 m Fast Switching R DS(on),TYP@ VGS=4.5 V 7.5 m 100% Avalanche Tested I D 18 A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Description VS4020AS designed by the trench processing techniques to achieve extremely
vs40200at.pdf
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VS40200AT 40V/200A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10V 2.5 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5V 3.5 m Enhancement mode I D 200 A Very low on-resistance RDS(on) @ VGS=4.5V 100% Avalanche test TO-220AB Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking
vs40200ap.pdf
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VS40200AP40V/50A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 3.3 m Enhancement modeR DS(on),TYP@ VGS=4.5V 4.4 m Very low on-resistanceI D(Silicon Limited) 118 A Fast Switching and High efficiencyI D(Package Limited) 50 A 100% Avalanche TestedPDFN5x6Part ID Package Type Marking PackingVS40200AP PDFN5x6 40200AP 3000pcs/Reel
vs40200atd.pdf
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VS40200ATD40V/120A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 3.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 4.3 m Very low on-resistanceI D(Silicon Limited) 226 A Fast Switching and High efficiencyI D(Package Limited) 120 A 100% Avalanche testTO-263Part ID Package Type Marking PackingVS40200ATD TO-263 40200ATD 800pcs/Reel
vs40200ad.pdf
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VS40200AD40V/80A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 3.8 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 4.6 m Very low on-resistanceI D(Silicon Limited) 165 A Fast Switching and High efficiencyI D(Package Limited) 80 A 100% Avalanche TestedTO-252Part ID Package Type Marking PackingVS40200AD TO-252 40200AD 2500pcs/Reel
vs40200at.pdf
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VS40200AT40V/120A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 3.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 4.3 m Very low on-resistanceI D(Silicon Limited) 226 A Fast Switching and High efficiencyI D(Package Limited) 120 A 100% Avalanche testTO-220ABPart ID Package Type Marking PackingVS40200AT TO-220AB 40200AT 50pcs/Tube
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