All MOSFET. VS4020AP Datasheet

 

VS4020AP MOSFET. Datasheet pdf. Equivalent


   Type Designator: VS4020AP
   Marking Code: 4020AP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 63 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: PDFN5X6

 VS4020AP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VS4020AP Datasheet (PDF)

 ..1. Size:765K  cn vanguard
 vs4020ap.pdf

VS4020AP VS4020AP

VS4020AP 40V/80A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 4.5 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 5.5 m Enhancement mode I D 80 A Very low on-resistance RDS(on) @ VGS=4.5 V 100% Avalanche test PDFN5x6 Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking i

 7.1. Size:571K  cn vanguard
 vs4020as.pdf

VS4020AP VS4020AP

VS4020AS 40V/18A N-Channel Advanced Power MOSFET Features V DS 40 V Low On-Resistance R DS(on),TYP@ VGS=10 V 6.0 m Fast Switching R DS(on),TYP@ VGS=4.5 V 7.5 m 100% Avalanche Tested I D 18 A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Description VS4020AS designed by the trench processing techniques to achieve extremely

 8.1. Size:401K  cn vanguard
 vs40200at.pdf

VS4020AP VS4020AP

VS40200AT 40V/200A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10V 2.5 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5V 3.5 m Enhancement mode I D 200 A Very low on-resistance RDS(on) @ VGS=4.5V 100% Avalanche test TO-220AB Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking

 8.2. Size:1058K  cn vgsemi
 vs40200ap.pdf

VS4020AP VS4020AP

VS40200AP40V/50A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 3.3 m Enhancement modeR DS(on),TYP@ VGS=4.5V 4.4 m Very low on-resistanceI D(Silicon Limited) 118 A Fast Switching and High efficiencyI D(Package Limited) 50 A 100% Avalanche TestedPDFN5x6Part ID Package Type Marking PackingVS40200AP PDFN5x6 40200AP 3000pcs/Reel

 8.3. Size:858K  cn vgsemi
 vs40200atd.pdf

VS4020AP VS4020AP

VS40200ATD40V/120A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 3.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 4.3 m Very low on-resistanceI D(Silicon Limited) 226 A Fast Switching and High efficiencyI D(Package Limited) 120 A 100% Avalanche testTO-263Part ID Package Type Marking PackingVS40200ATD TO-263 40200ATD 800pcs/Reel

 8.4. Size:933K  cn vgsemi
 vs40200ad.pdf

VS4020AP VS4020AP

VS40200AD40V/80A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 3.8 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 4.6 m Very low on-resistanceI D(Silicon Limited) 165 A Fast Switching and High efficiencyI D(Package Limited) 80 A 100% Avalanche TestedTO-252Part ID Package Type Marking PackingVS40200AD TO-252 40200AD 2500pcs/Reel

 8.5. Size:790K  cn vgsemi
 vs40200at.pdf

VS4020AP VS4020AP

VS40200AT40V/120A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 3.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 4.3 m Very low on-resistanceI D(Silicon Limited) 226 A Fast Switching and High efficiencyI D(Package Limited) 120 A 100% Avalanche testTO-220ABPart ID Package Type Marking PackingVS40200AT TO-220AB 40200AT 50pcs/Tube

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXTA8N50P | IXTQ82N25P

 

 
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