VSD004N03MS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VSD004N03MS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 150 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 580 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de VSD004N03MS MOSFET
VSD004N03MS Datasheet (PDF)
vsd004n03ms.pdf

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vsd005n03ms.pdf

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Otros transistores... VS6808DH , VS6880AT , VS7N65AD , VS7N65AF , VS8068AD , VS80N08AT , VS8205BH , VSB012N03MS , TK10A60D , VSD007N06MS , VSD013N10MS , VSD050P10MS , VSD090N10MS , VSE009NE6MS-G , VSE090N10MS , VSF013N10MS , VSF600N70HS .
History: SE47NS65TS | TSM4425CS | SQ3985EV | RU1HE12L | RJK0451DPB | 1N60L-TA3-T | 2N65KG-TF3-T
History: SE47NS65TS | TSM4425CS | SQ3985EV | RU1HE12L | RJK0451DPB | 1N60L-TA3-T | 2N65KG-TF3-T



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