SM140R50CT8TL Todos los transistores

 

SM140R50CT8TL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SM140R50CT8TL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 312 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 370 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
   Paquete / Cubierta: TO247

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SM140R50CT8TL Datasheet (PDF)

 5.1. Size:862K  cn sps
sm140r50c.pdf

SM140R50CT8TL
SM140R50CT8TL

SM140R50C30V /36A Single N Power MOSFET N-Channel Super Junction Power MOSFETDescription ID 24A SM140R50C is power MOSFET using advanced super junction technology that can realize very low VDSS 500V on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling Rdson (max.) 0.14(VGS=10V, ID=12A) technology. These user friendly devi

 9.1. Size:162K  sino
sm1402nss.pdf

SM140R50CT8TL
SM140R50CT8TL

SM1402NSS N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/0.4A,D RDS(ON)= 2.2(max.) @ VGS=10VS RDS(ON)= 2.6(max.) @ VGS=4.5VG ESD ProtectionTop View of SC-70 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications High Speed Switching. Analog Switching Application.SN-Channel MOSFETOrdering and Ma

 9.2. Size:254K  sino
sm1401pss.pdf

SM140R50CT8TL
SM140R50CT8TL

SM1401PSS P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-2.8A, DRDS(ON)= 92m (Max.) @ VGS=-4.5VSRDS(ON)= 135m (Max.) @ VGS=-2.5VGRDS(ON)= 220m (Max.) @ VGS=-1.8VTop View of SC-70 Super High Dense Cell Design Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in Notebook Computer,Portabl

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