SM140R50CT8TL
MOSFET. Datasheet pdf. Equivalent
Type Designator: SM140R50CT8TL
Marking Code: 140R50C
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 312
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 24
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 70
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 370
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14
Ohm
Package:
TO247
SM140R50CT8TL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM140R50CT8TL
Datasheet (PDF)
5.1. Size:862K cn sps
sm140r50c.pdf
SM140R50C30V /36A Single N Power MOSFET N-Channel Super Junction Power MOSFETDescription ID 24A SM140R50C is power MOSFET using advanced super junction technology that can realize very low VDSS 500V on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling Rdson (max.) 0.14(VGS=10V, ID=12A) technology. These user friendly devi
9.1. Size:162K sino
sm1402nss.pdf
SM1402NSS N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/0.4A,D RDS(ON)= 2.2(max.) @ VGS=10VS RDS(ON)= 2.6(max.) @ VGS=4.5VG ESD ProtectionTop View of SC-70 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications High Speed Switching. Analog Switching Application.SN-Channel MOSFETOrdering and Ma
9.2. Size:254K sino
sm1401pss.pdf
SM1401PSS P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-2.8A, DRDS(ON)= 92m (Max.) @ VGS=-4.5VSRDS(ON)= 135m (Max.) @ VGS=-2.5VGRDS(ON)= 220m (Max.) @ VGS=-1.8VTop View of SC-70 Super High Dense Cell Design Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in Notebook Computer,Portabl
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