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SM3400 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SM3400
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.8 nS
   Cossⓘ - Capacitancia de salida: 99 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SOT23
 

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SM3400 Datasheet (PDF)

 ..1. Size:4431K  cn sps
sm3400.pdf pdf_icon

SM3400

SM3400N-Channel Enhancement Mode Field Effect TransistorP-Channel Enhancement-Mode MOSFETFeatures 1Advanced Trench Process Technology. 2High Density Cell Design for Ultra Low On-Resistance. 3Improved Shoot-Through FOM 4RoHS Compliant D SOT-23Top ViewGDSG S PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 28@ VGS = 10V33 @ VGS = 4.5V 30V 5.8A

 0.1. Size:242K  taiwansemi
tsm3400cx.pdf pdf_icon

SM3400

TSM3400 30V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 28 @ VGS = 10V 5.8 3. Drain 30 33 @ VGS = 4.5V 5.0 52 @ VGS = 2.5V 4.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Infor

 0.2. Size:891K  globaltech semi
gsm3400.pdf pdf_icon

SM3400

GSM3400 GSM3400 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400, N-Channel enhancement mode 30V/4.0A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench 30V/3.5A,RDS(ON)=52m@VGS=4.5V Technology to provide excellent RDS(ON), low 30V/2.8A,RDS(ON)=58m@VGS=2.5V gate charge. These devices are particularly Super high density cell des

 0.3. Size:922K  globaltech semi
gsm3400a.pdf pdf_icon

SM3400

GSM3400A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=65m@VGS=2.5V Super high density cell design for These devices are particularly suited for lo

Otros transistores... SM2301 , SM2302 , SM2305 , SM2306 , SM2312SRL , SM2314 , SM3012T9RL , SM32314D1RL , IRFP260N , SM3401 , SM3402SRL , SM3404SRL , SM3407 , SM3415 , SM3416 , SM360R65CT2TL , SM360R65CT1TL .

History: 2SK1887 | FMV16N50E | CS12N60FA9H | BLS60R036-W

 

 
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