Справочник MOSFET. SM3400

 

SM3400 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SM3400
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 9.7 nC
   trⓘ - Время нарастания: 4.8 ns
   Cossⓘ - Выходная емкость: 99 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для SM3400

 

 

SM3400 Datasheet (PDF)

 ..1. Size:4431K  cn sps
 sm3400.pdf

SM3400 SM3400

SM3400N-Channel Enhancement Mode Field Effect TransistorP-Channel Enhancement-Mode MOSFETFeatures 1Advanced Trench Process Technology. 2High Density Cell Design for Ultra Low On-Resistance. 3Improved Shoot-Through FOM 4RoHS Compliant D SOT-23Top ViewGDSG S PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 28@ VGS = 10V33 @ VGS = 4.5V 30V 5.8A

 0.1. Size:242K  taiwansemi
 tsm3400cx.pdf

SM3400 SM3400

TSM3400 30V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 28 @ VGS = 10V 5.8 3. Drain 30 33 @ VGS = 4.5V 5.0 52 @ VGS = 2.5V 4.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Infor

 0.2. Size:891K  globaltech semi
 gsm3400.pdf

SM3400 SM3400

GSM3400 GSM3400 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400, N-Channel enhancement mode 30V/4.0A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench 30V/3.5A,RDS(ON)=52m@VGS=4.5V Technology to provide excellent RDS(ON), low 30V/2.8A,RDS(ON)=58m@VGS=2.5V gate charge. These devices are particularly Super high density cell des

 0.3. Size:922K  globaltech semi
 gsm3400a.pdf

SM3400 SM3400

GSM3400A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=65m@VGS=2.5V Super high density cell design for These devices are particularly suited for lo

 0.4. Size:452K  globaltech semi
 gsm3400as.pdf

SM3400 SM3400

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=50m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.5A,RDS(ON)=55m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=75m@VGS=2.5V These devices are particularly suited for low Super high density cell design for

 0.5. Size:921K  globaltech semi
 gsm3400s.pdf

SM3400 SM3400

GSM3400S GSM3400S 30V N-Channel Enhancement Mode MOSFET Product Description Features 30V/4.0A,RDS(ON)=42m@VGS=10V GSM3400S, N-Channel enhancement mode 30V/3.0A,RDS(ON)=44m@VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/2.6A,RDS(ON)=50m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) The

 0.6. Size:605K  jsmsemi
 jsm3400.pdf

SM3400 SM3400

JSM3400N-Channel 30-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-23 SOT-23-3L/0.028@ 10V31.GATE30V5.8A0.033@ 4.5V2.SOURCE3.DRAIN10.052@ 2.5V2General FEATUREEquivalent CircuitMARKINGTrenchFET Power MOSFETLead free product is acquiredSurface mount packageA01TF wAPPLICATION*wweek codeLoad Switch for Portable DevicesDC/DC Convert

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