SM3400 - описание и поиск аналогов

SM3400 N-Channel Enhancement Mode Field Effect Transistor P-Channel Enhancement-Mode MOSFET Features 1 Advanced Trench Process Technology. 2 High Density Cell Design for Ultra Low On-Resistance. 3 Improved Shoot-Through FOM 4 RoHS Compliant D SOT-23 Top View G D S G S PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 28@ VGS = 10V 33 @ VGS = 4.5V 30V 5.8A

TSM3400 30V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Gate 2. Source 28 @ VGS = 10V 5.8 3. Drain 30 33 @ VGS = 4.5V 5.0 52 @ VGS = 2.5V 4.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Infor

GSM3400 GSM3400 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400, N-Channel enhancement mode 30V/4.0A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench 30V/3.5A,RDS(ON)=52m @VGS=4.5V Technology to provide excellent RDS(ON), low 30V/2.8A,RDS(ON)=58m @VGS=2.5V gate charge. These devices are particularly Super high density cell des

GSM3400A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=54m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=65m @VGS=2.5V Super high density cell design for These devices are particularly suited for lo

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=50m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.5A,RDS(ON)=55m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=75m @VGS=2.5V These devices are particularly suited for low Super high density cell design for

GSM3400S GSM3400S 30V N-Channel Enhancement Mode MOSFET Product Description Features 30V/4.0A,RDS(ON)=42m @VGS=10V GSM3400S, N-Channel enhancement mode 30V/3.0A,RDS(ON)=44m @VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/2.6A,RDS(ON)=50m @VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) The

JSM3400 N-Channel 30-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23 SOT-23-3L / 0.028 @ 10V 3 1.GATE 30V 5.8A 0.033 @ 4.5V 2.SOURCE 3.DRAIN 1 0.052 @ 2.5V 2 General FEATURE Equivalent Circuit MARKING TrenchFET Power MOSFET Lead free product is acquired Surface mount package A01TF w APPLICATION *w week code Load Switch for Portable Devices DC/DC Convert