SM3401 Todos los transistores

 ..1. Size:9601K  cn sps
 sm3401.pdf

SM3401 Features Schematic diagram SOT-23 Top View G D S PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 52@ VGS = -10V 65@ VGS = -4.5V -30V -4.4A 85 @ VGS =- 2.5V Ordering Information Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 SM3401SR G SM3401SR L SOT-23 G S D Tape Reel SM3401 X X X (1) S SOT-23 (1)Packa

 0.1. Size:235K  taiwansemi
 tsm3401cx.pdf

TSM3401 30V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 60 @ VGS = 10V -3.0 3. Drain -30 90 @ VGS = 4.5V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Ordering Info

 0.2. Size:152K  sino
 sm3401nsqg.pdf

SM3401NSQG N-Channel Enhancement Mode MOSFET Features Pin Description D D D 30V/50A, D RDS(ON) =2.8m (max.) @ VGS =10V RDS(ON) =3.6m (max.) @ VGS =4.5V G S S S 100% UIS + Rg Tested DFN3.3x3.3-8(Saw-EP) Avalanche Rated Reliable and Rugged (5,6,7,8) D D DD Lead Free and Green Devices Available (RoHS Compliant) Applications (4) G Power Management in Notebook Com

 0.3. Size:1426K  globaltech semi
 gsm3401s.pdf

GSM3401S GSM3401S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3401S, P-Channel enhancement mode -30V/-4.0A RDS(ON)=65m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-3.2A RDS(ON)=80m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.0A RDS(ON)=105m @VGS=-2.5V Super high density cell design for extremely These devi

 0.4. Size:612K  globaltech semi
 gsm3401as.pdf

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3401AS, P-Channel enhancement mode -30V/-2.4 RDS(ON)=70m @VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-1.8 RDS(ON)=80m @VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-1.2 RDS(ON)=105m @VGS=-2.5V These devices are particularly suited for low Super high density cell de

 0.5. Size:546K  jsmsemi
 jsm3401l.pdf

JSM3401L P-Channel 30-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23-3L 0.053 @-10V 3 -30V 0.065 @-4.5V 1.GATE -4.2A 2.SOURCE 0.085 @-2.5V 3.DRAIN 1 2 MARKING Equivalent Circuit General FEATURE TrenchFET Power MOSFET Lead free product is acquired Surface mount package A19TF w APPLICATION *w week code Load Switch for Portable Devices DC/DC Converter Maximu