SM3401 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM3401
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
   Paquete / Cubierta: SOT23

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SM3401 Datasheet (PDF)

..1. Size:9601K cn sps
sm3401.pdf

SM3401Features Schematic diagram SOT-23Top ViewGDSPRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 52@ VGS = -10V65@ VGS = -4.5V -30V -4.4A 85 @ VGS =- 2.5V Ordering Information Ordering Number Pin AssignmentPackage PackingLead Free Halogen Free 1 2 3 SM3401SR GSM3401SR L SOT-23 G S D Tape ReelSM3401 X X X (1) SSOT-23(1)Packa

0.1. Size:235K taiwansemi
tsm3401cx.pdf

TSM3401 30V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 60 @ VGS = 10V -3.0 3. Drain -30 90 @ VGS = 4.5V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Ordering Info

0.2. Size:152K sino
sm3401nsqg.pdf

SM3401NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 30V/50A, DRDS(ON) =2.8m(max.) @ VGS =10VRDS(ON) =3.6m(max.) @ VGS =4.5VGSSS 100% UIS + Rg TestedDFN3.3x3.3-8(Saw-EP) Avalanche Rated Reliable and Rugged(5,6,7,8)D D DD Lead Free and Green Devices Available(RoHS Compliant)Applications (4) G Power Management in Notebook Com

0.3. Size:1426K globaltech semi
gsm3401s.pdf

GSM3401S GSM3401S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3401S, P-Channel enhancement mode -30V/-4.0A RDS(ON)=65m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-3.2A RDS(ON)=80m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.0A RDS(ON)=105m@VGS=-2.5V Super high density cell design for extremely These devi

0.4. Size:612K globaltech semi
gsm3401as.pdf

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3401AS, P-Channel enhancement mode -30V/-2.4 RDS(ON)=70m@VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-1.8 RDS(ON)=80m@VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-1.2 RDS(ON)=105m@VGS=-2.5V These devices are particularly suited for low Super high density cell de

0.5. Size:546K jsmsemi
jsm3401l.pdf

JSM3401LP-Channel 30-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-23-3L0.053@-10V3-30V 0.065@-4.5V 1.GATE-4.2A2.SOURCE0.085@-2.5V3.DRAIN12MARKING Equivalent CircuitGeneral FEATURETrenchFET Power MOSFETLead free product is acquiredSurface mount packageA19TF wAPPLICATION*wweek codeLoad Switch for Portable DevicesDC/DC ConverterMaximu

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