SM3402SRL Todos los transistores

 ..1. Size:771K  cn sps
 sm3402srl.pdf

SM3402SRL 30V /4A Single N Power MOSFET B N03B N 30V /4A Single N Power MOSFET 4N03B General Description 30 V V DS 30V /4A Single N Power MOSFET 45.5 m RDS(on),TYP@VGS=10V Very low on-resistance RDS(on) @ VGS=4.5 V 71.5 m RDS(on),TYP@VGS=4.5 Pb-free lead plating; RoHS compliant 4 A ID Tape and reel Part ID Package Type Marking infomation 100% UIS Tested 100% Rg Tested SM340

 8.1. Size:151K  sino
 sm3402nsqg.pdf

SM3402NSQG N-Channel Enhancement Mode MOSFET Features Pin Description D D D 30V/50A, D RDS(ON) =4.6m (max.) @ VGS =10V RDS(ON) =6.2m (max.) @ VGS =4.5V SG S S ESD Protected DFN3x3D-8_EP Avalanche Rated 100% UIS + Rg Tested (5,6,7,8) DDDD Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) (4) G Applications Power Management in Noteb

 8.2. Size:453K  globaltech semi
 gsm3402a.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3402A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=82m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.0A,RDS(ON)=87m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=110m @VGS=2.5V These devices are particularly suited for low Super high density cell design for

 8.3. Size:1144K  globaltech semi
 gsm3402.pdf

GSM3402 GSM3402 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3402, N-Channel enhancement mode 30V/4.0A,RDS(ON)=75m @VGS=10V MOSFET, uses Advanced Trench 30V/3.5A,RDS(ON)=80m @VGS=4.5V Technology to provide excellent RDS(ON), low 30V/2.8A,RDS(ON)=100m @VGS=2.5V gate charge. These devices are particularly Super high density cell de