SM4410 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM4410
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8.4 nS
   Cossⓘ - Capacitancia de salida: 159.6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: SOP8

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SM4410 Datasheet (PDF)

..1. Size:3801K cn sps
sm4410.pdf

SM4410N-Channel Enhancement-Mode MOSFET (30V,10A)PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 15 @ VGS = 10V ,ID=10A 30V 10A 24 @ VGS = 4.5V,ID=5A Features 1 Advanced Trench Process Technology. 2 High Density Cell Design for Ultra Low On-Resistance. 3 Lead free product is acquired. 4 Surface mount Package 5 RoHS Compliant. Ordering

0.1. Size:121K taiwansemi
tsm4410cs.pdf

0.2. Size:122K taiwansemi
tsm4410dcs.pdf

0.3. Size:135K silicon standard
ssm4410m.pdf

SSM4410MN-CHANNEL ENHANCEMENT MODE POWER MOSFETLow on-resistance BV 30VDSSDDFast switching D RDS(ON) 13.5mD Simple drive requirement I 10ADGSSSO-8SDescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness. GSThe SO-8 package is wid

0.4. Size:2056K huashuo
hsm4410.pdf

HSM4410 Description Product Summary The HSM4410 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 9.5 m converter applications. ID 12 A The HSM4410 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l Super Low Gate C

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