SM4411 Datasheet. Equivalente

 ..1. Size:38721K  cn sps
 sm4411.pdf

SM4411 P-Channel Enhancement Mode Field Effect Transistor Description The SM4411 uses advanced trench technology to S D provide excellent RDS(ON), and ultra-low low gate S D charge. This device is suitable for use as a load S D G D switch or in PWM applications. Top View SOIC-8 General Features D VDS (V) = -30V ID = -8 A (VGS = -10V) RDS(ON)

 9.1. Size:121K  taiwansemi
 tsm4410cs.pdf

 9.2. Size:122K  taiwansemi
 tsm4410dcs.pdf

 9.3. Size:214K  taiwansemi
 tsm4416dcs.pdf

TSM4416D 30V Dual N-Channel MOSFET SOP-8 Pin Definition PRODUCT SUMMARY 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 VDS (V) RDS(on)(m ) ID (A) 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 15 @ VGS = 10V 11 30 24 @ VGS = 4.5V 10 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application

 9.4. Size:141K  taiwansemi
 tsm4415cs.pdf

Preliminary TSM4415 30V P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Source 8. Drain 26 @ VGS = -20V -8.0 2. Source 7. Drain -30 3. Source 6. Drain 35 @ VGS = -10V -8.0 4. Gate 5, Drain Features Block Diagram Advance Trench Process Technology (1,2,3) High Density Cell Design for Ultra Low On-resistance Applicat

 9.5. Size:906K  globaltech semi
 gsm4412w.pdf

GSM4412W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4412W, N-Channel enhancement mode 30V/ 7.6A,RDS(ON)=35m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/ 6.2A,RDS(ON)=42m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.6. Size:935K  globaltech semi
 gsm4412.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4412, N-Channel enhancement mode 30V/ 7.6A,RDS(ON)=35m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/ 6.2A,RDS(ON)=42m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage powe

 9.7. Size:135K  silicon standard
 ssm4410m.pdf

SSM4410M N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low on-resistance BV 30V DSS D D Fast switching D RDS(ON) 13.5m D Simple drive requirement I 10A D G S S SO-8 S Description D Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G S The SO-8 package is wid

 9.8. Size:2056K  huashuo
 hsm4410.pdf

HSM4410 Description Product Summary The HSM4410 is the high cell density trenched N- VDS 30 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 9.5 m converter applications. ID 12 A The HSM4410 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l Super Low Gate C

 9.9. Size:3801K  cn sps
 sm4410.pdf

SM4410 N-Channel Enhancement-Mode MOSFET (30V,10A) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 15 @ VGS = 10V ,ID=10A 30V 10A 24 @ VGS = 4.5V,ID=5A Features 1 Advanced Trench Process Technology. 2 High Density Cell Design for Ultra Low On-Resistance. 3 Lead free product is acquired . 4 Surface mount Package 5 RoHS Compliant. Ordering

 9.10. Size:1399K  cn vbsemi
 tsm4415cs.pdf

TSM4415CS www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top