All MOSFET. SM4411 Datasheet

 

SM4411 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM4411
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18.4 nC
   trⓘ - Rise Time: 3.4 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: SOP8

 SM4411 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM4411 Datasheet (PDF)

 ..1. Size:38721K  cn sps
sm4411.pdf

SM4411
SM4411

SM4411P-Channel Enhancement Mode Field Effect TransistorDescription The SM4411 uses advanced trench technology to S Dprovide excellent RDS(ON), and ultra-low low gate S Dcharge. This device is suitable for use as a load S DG Dswitch or in PWM applications. Top ViewSOIC-8General Features D VDS (V) = -30VID = -8 A (VGS = -10V)RDS(ON)

 9.1. Size:121K  taiwansemi
tsm4410cs.pdf

SM4411
SM4411

 9.2. Size:122K  taiwansemi
tsm4410dcs.pdf

SM4411
SM4411

 9.3. Size:214K  taiwansemi
tsm4416dcs.pdf

SM4411
SM4411

TSM4416D 30V Dual N-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 VDS (V) RDS(on)(m) ID (A) 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 15 @ VGS = 10V 11 30 24 @ VGS = 4.5V 10 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application

 9.4. Size:141K  taiwansemi
tsm4415cs.pdf

SM4411
SM4411

Preliminary TSM4415 30V P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Source 8. Drain 26 @ VGS = -20V -8.0 2. Source 7. Drain -30 3. Source 6. Drain 35 @ VGS = -10V -8.0 4. Gate 5, DrainFeatures Block Diagram Advance Trench Process Technology (1,2,3) High Density Cell Design for Ultra Low On-resistance Applicat

 9.5. Size:906K  globaltech semi
gsm4412w.pdf

SM4411
SM4411

GSM4412W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4412W, N-Channel enhancement mode 30V/ 7.6A,RDS(ON)=35m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/ 6.2A,RDS(ON)=42m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.6. Size:935K  globaltech semi
gsm4412.pdf

SM4411
SM4411

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4412, N-Channel enhancement mode 30V/ 7.6A,RDS(ON)=35m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/ 6.2A,RDS(ON)=42m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage powe

 9.7. Size:135K  silicon standard
ssm4410m.pdf

SM4411
SM4411

SSM4410MN-CHANNEL ENHANCEMENT MODE POWER MOSFETLow on-resistance BV 30VDSSDDFast switching D RDS(ON) 13.5mD Simple drive requirement I 10ADGSSSO-8SDescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness. GSThe SO-8 package is wid

 9.8. Size:2056K  huashuo
hsm4410.pdf

SM4411
SM4411

HSM4410 Description Product Summary The HSM4410 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 9.5 m converter applications. ID 12 A The HSM4410 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l Super Low Gate C

 9.9. Size:3801K  cn sps
sm4410.pdf

SM4411
SM4411

SM4410N-Channel Enhancement-Mode MOSFET (30V,10A)PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 15 @ VGS = 10V ,ID=10A 30V 10A 24 @ VGS = 4.5V,ID=5A Features 1 Advanced Trench Process Technology. 2 High Density Cell Design for Ultra Low On-Resistance. 3 Lead free product is acquired. 4 Surface mount Package 5 RoHS Compliant. Ordering

 9.10. Size:1399K  cn vbsemi
tsm4415cs.pdf

SM4411
SM4411

TSM4415CSwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SM1A54NHFP | BLF871S

 

 
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