SM4421 Todos los transistores

 ..1. Size:48509K  cn sps
 sm4421.pdf

SM4421 -60V P - Channel MOSFET Description -60V /-6.2A Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant -60 V V DS 35.0 m RDS(on),TYP@VGS=10V 55.0 m RDS(on),TYP@VGS=4.5 -6.2 A ID Ordering Information Ordering Number Pin Assignment Package Packing 1 2 3 4 5 6 7 Lead Free Halogen Free 8 SM4421PR G SM4421PR L

 9.1. Size:385K  taiwansemi
 tsm4424cs.pdf

TSM4424 20V N-Channel MOSFET SOP-8 Pin Definition PRODUCT SUMMARY 1. Source 8. Drain 2. Source 7. Drain VDS (V) RDS(on)(m ) ID (A) 3. Source 6. Drain 4. Gate 5. Drain 30 @ VGS = 4.5V 4.5 20 35 @ VGS = 2.5V 3.5 45 @ VGS = 1.8V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application

 9.2. Size:385K  taiwansemi
 tsm4426cs.pdf

TSM4426 20V N-Channel MOSFET SOP-8 Pin Definition PRODUCT SUMMARY 1. Source VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Source 30 @ VGS = 4.5V 4.5 4. Gate 5, 6, 7, 8. Drain 20 40 @ VGS = 2.5V 3.5 200 @ VGS = 1.8V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Specially Des

 9.3. Size:295K  taiwansemi
 tsm4425cs.pdf

TSM4425 30V P-Channel MOSFET SOP-8 Pin Definition PRODUCT SUMMARY 1. Source 8. Drain VDS (V) RDS(on)(m ) ID (A) 2. Source 7. Drain 3. Source 6. Drain 12 @ VGS = -10V -11 4. Gate 5. Drain -30 19 @ VGS = -4.5V -8.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Swi

 9.4. Size:484K  globaltech semi
 gsm4422.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4422, N-Channel enhancement mode 30V/ 6.8A,RDS(ON)=36m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/ 6.0A,RDS(ON)=42m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/ 5.2A,RDS(ON)=50m @VGS=2.5V These devices are particularly suited for low Super high density cell design for

 9.5. Size:1239K  globaltech semi
 gsm4424.pdf

40V N-Channel Enhancement Mode MOSFET Product Description Features 40V/8A,RDS(ON)= 24m @VGS=10V GSM4424, N-Channel enhancement mode 40V/6A,RDS(ON)= 44m @VGS=4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) These devices are particularly suited for low SOP-8

 9.6. Size:1210K  globaltech semi
 gsm4424w.pdf

GSM4424W 40V N-Channel Enhancement Mode MOSFET Product Description Features 40V/8A,RDS(ON)=22m @VGS=10V GSM4424W, N-Channel enhancement mode 40V/6A,RDS(ON)=28m @VGS=4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) SOP-8P package design These devices are p

 9.7. Size:301K  silicon standard
 ssm4424gm.pdf

SSM4424GM N-channel Enhancement-mode Power MOSFET D Simple drive requirement BVDSS 30V Lower gate charge RDS(ON) 9m G Fast switching characteristics I 13.8A D S Pb-free, RoHS compliant. DESCRIPTION D D Advanced Power MOSFETs from Silicon Standard provide the D D designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effecti

 9.8. Size:223K  silicon standard
 ssm4423gm.pdf

SSM4423GM P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement BV -30V DSS D D Lower gate charge R 15m DS(ON) D D Fast switching characteristics ID -11A G S S SO-8 S Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness.

 9.9. Size:526K  silicon standard
 ssm4426gm.pdf

SSM4426GM N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM4426GM acheives fast switching performance BVDSS 30V with low gate charge without a complex drive circuit. It RDS(ON) 6.5m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 16A D The SSM4426GM is supplied in an RoHS-compliant Pb-free; RoHS-c