SM4421 Specs and Replacement

Type Designator: SM4421

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13.6 nS

Cossⓘ - Output Capacitance: 179 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOP8

SM4421 substitution

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SM4421 datasheet

 ..1. Size:48509K  cn sps
sm4421.pdf pdf_icon

SM4421

SM4421 -60V P - Channel MOSFET Description -60V /-6.2A Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant -60 V V DS 35.0 m RDS(on),TYP@VGS=10V 55.0 m RDS(on),TYP@VGS=4.5 -6.2 A ID Ordering Information Ordering Number Pin Assignment Package Packing 1 2 3 4 5 6 7 Lead Free Halogen Free 8 SM4421PR G SM4421PR L... See More ⇒

 9.1. Size:385K  taiwansemi
tsm4424cs.pdf pdf_icon

SM4421

TSM4424 20V N-Channel MOSFET SOP-8 Pin Definition PRODUCT SUMMARY 1. Source 8. Drain 2. Source 7. Drain VDS (V) RDS(on)(m ) ID (A) 3. Source 6. Drain 4. Gate 5. Drain 30 @ VGS = 4.5V 4.5 20 35 @ VGS = 2.5V 3.5 45 @ VGS = 1.8V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application ... See More ⇒

 9.2. Size:385K  taiwansemi
tsm4426cs.pdf pdf_icon

SM4421

TSM4426 20V N-Channel MOSFET SOP-8 Pin Definition PRODUCT SUMMARY 1. Source VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Source 30 @ VGS = 4.5V 4.5 4. Gate 5, 6, 7, 8. Drain 20 40 @ VGS = 2.5V 3.5 200 @ VGS = 1.8V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Specially Des... See More ⇒

 9.3. Size:295K  taiwansemi
tsm4425cs.pdf pdf_icon

SM4421

TSM4425 30V P-Channel MOSFET SOP-8 Pin Definition PRODUCT SUMMARY 1. Source 8. Drain VDS (V) RDS(on)(m ) ID (A) 2. Source 7. Drain 3. Source 6. Drain 12 @ VGS = -10V -11 4. Gate 5. Drain -30 19 @ VGS = -4.5V -8.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Swi... See More ⇒

Detailed specifications: SM420R65CT2TL, SM420R65CT1TL, SM4286T9RL, SM4306PRL, SM4404BPRL, SM4405PRL, SM4410, SM4411, AO3401, SM4435, SM4441, SM4447A, SM4480, SM4485, SM4496PRL, SM454AT9RL, SM4606

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.