SM4447A Todos los transistores

 

SM4447A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SM4447A
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8.92 nS
   Cossⓘ - Capacitancia de salida: 574 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: SOP8
     - Selección de transistores por parámetros

 

SM4447A Datasheet (PDF)

 ..1. Size:54562K  cn sps
 sm4447a.pdf pdf_icon

SM4447A

SM4447A-30V P - Channel MOSFET Description -30V /-17A Power MOSFETVery low on-resistance RDS(on) @ VGS=4.5 VPb-free lead plating; RoHS compliant-30 VV DS12.0 m RDS(on),TYP@VGS=10V16.5 mRDS(on),TYP@VGS=4.5-17 AID Ordering Information Ordering Number Pin AssignmentPackage Packing1 2 3 4 5 6 7Lead Free Halogen Free 8SM4447APR GSM4447APR

 8.1. Size:1055K  globaltech semi
 gsm4447.pdf pdf_icon

SM4447A

GSM4447 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4447, P-Channel enhancement mode -40V/-10A,RDS(ON)=40m@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-8A,RDS(ON)=55m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.1. Size:1289K  globaltech semi
 gsm4440.pdf pdf_icon

SM4447A

60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4440, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 9.2. Size:859K  globaltech semi
 gsm4440w.pdf pdf_icon

SM4447A

GSM4440W 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4440W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HM3N40R | AOK160A60FDL | SSM4502GM | FQD20N06L | FPF1C2P5BF07A | 24NM60G-TQ2-T | SGSP341

 

 
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