SM4447A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SM4447A-30V P - Channel MOSFET Description -30V /-17A Power MOSFETVery low on-resistance RDS(on) @ VGS=4.5 VPb-free lead plating; RoHS compliant-30 VV DS12.0 m RDS(on),TYP@VGS=10V16.5 mRDS(on),TYP@VGS=4.5-17 AID Ordering Information Ordering Number Pin AssignmentPackage Packing1 2 3 4 5 6 7Lead Free Halogen Free 8SM4447APR GSM4447APR

GSM4447 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4447, P-Channel enhancement mode -40V/-10A,RDS(ON)=40m@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-8A,RDS(ON)=55m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4440, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

GSM4440W 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4440W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

SM4441-60V P - Channel MOSFET Description -60V /-4A Power MOSFETVery low on-resistance RDS(on) @ VGS=4.5 VPb-free lead plating; RoHS compliant-60 VV DS91.0 mRDS(on),TYP@VGS=10V143.0 mRDS(on),TYP@VGS=4.5-4 AID Ordering Information Ordering Number Pin AssignmentPackage Packing1 2 3 4 5 6 7Lead Free Halogen Free 8SM4441PR GSM4441PR L SO