SM4447A Datasheet. Equivalente

 ..1. Size:54562K  cn sps
 sm4447a.pdf

SM4447A -30V P - Channel MOSFET Description -30V /-17A Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant -30 V V DS 12.0 m RDS(on),TYP@VGS=10V 16.5 m RDS(on),TYP@VGS=4.5 -17 A ID Ordering Information Ordering Number Pin Assignment Package Packing 1 2 3 4 5 6 7 Lead Free Halogen Free 8 SM4447APR G SM4447APR

 8.1. Size:1055K  globaltech semi
 gsm4447.pdf

GSM4447 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4447, P-Channel enhancement mode -40V/-10A,RDS(ON)=40m @VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-8A,RDS(ON)=55m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.1. Size:1289K  globaltech semi
 gsm4440.pdf

60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4440, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=50m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 9.2. Size:859K  globaltech semi
 gsm4440w.pdf

 9.3. Size:51307K  cn sps
 sm4441.pdf

SM4441 -60V P - Channel MOSFET Description -60V /-4A Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant -60 V V DS 91.0 m RDS(on),TYP@VGS=10V 143.0 m RDS(on),TYP@VGS=4.5 -4 A ID Ordering Information Ordering Number Pin Assignment Package Packing 1 2 3 4 5 6 7 Lead Free Halogen Free 8 SM4441PR G SM4441PR L SO