All MOSFET. SM4447A Datasheet

 

SM4447A MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM4447A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.6 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 54 nC
   trⓘ - Rise Time: 8.92 nS
   Cossⓘ - Output Capacitance: 574 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: SOP8

 SM4447A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM4447A Datasheet (PDF)

 ..1. Size:54562K  cn sps
 sm4447a.pdf

SM4447A SM4447A

SM4447A-30V P - Channel MOSFET Description -30V /-17A Power MOSFETVery low on-resistance RDS(on) @ VGS=4.5 VPb-free lead plating; RoHS compliant-30 VV DS12.0 m RDS(on),TYP@VGS=10V16.5 mRDS(on),TYP@VGS=4.5-17 AID Ordering Information Ordering Number Pin AssignmentPackage Packing1 2 3 4 5 6 7Lead Free Halogen Free 8SM4447APR GSM4447APR

 8.1. Size:1055K  globaltech semi
 gsm4447.pdf

SM4447A SM4447A

GSM4447 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4447, P-Channel enhancement mode -40V/-10A,RDS(ON)=40m@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-8A,RDS(ON)=55m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.1. Size:1289K  globaltech semi
 gsm4440.pdf

SM4447A SM4447A

60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4440, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 9.2. Size:859K  globaltech semi
 gsm4440w.pdf

SM4447A SM4447A

GSM4440W 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4440W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.3. Size:51307K  cn sps
 sm4441.pdf

SM4447A SM4447A

SM4441-60V P - Channel MOSFET Description -60V /-4A Power MOSFETVery low on-resistance RDS(on) @ VGS=4.5 VPb-free lead plating; RoHS compliant-60 VV DS91.0 mRDS(on),TYP@VGS=10V143.0 mRDS(on),TYP@VGS=4.5-4 AID Ordering Information Ordering Number Pin AssignmentPackage Packing1 2 3 4 5 6 7Lead Free Halogen Free 8SM4441PR GSM4441PR L SO

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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