SMIRF10N65T1TL Todos los transistores

 

SMIRF10N65T1TL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SMIRF10N65T1TL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 156 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 60(max) nS
   Cossⓘ - Capacitancia de salida: 145 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: TO220
 

 Búsqueda de reemplazo de SMIRF10N65T1TL MOSFET

   - Selección ⓘ de transistores por parámetros

 

SMIRF10N65T1TL Datasheet (PDF)

 4.1. Size:1202K  cn sps
 smirf10n65.pdf pdf_icon

SMIRF10N65T1TL

SMIRF10N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 10A SMIRF10N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 1.0(VGS=10V, ID=5A) on-state resistance, provide superior

 8.1. Size:1604K  cn sps
 smirf16n65.pdf pdf_icon

SMIRF10N65T1TL

SMIRF16N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6(VGS=10V, ID=8A) on-state resistance, provide superior

 8.2. Size:1313K  cn sps
 smirf12n65.pdf pdf_icon

SMIRF10N65T1TL

SMIRF12N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 12A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.75(VGS=10V, ID=6A) on-state resistance, provide superior

 8.3. Size:1558K  cn sps
 smirf18n50.pdf pdf_icon

SMIRF10N65T1TL

SMIRF18N5030V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 18A SMIRF18N50 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 500V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.35(VGS=10V, ID=9A) on-state resistance, provide superior

MOSTRAR MÁS

Otros transistores... SM6536D1RL , SM6590D1RL , SM66406D1RL , SM6796D1RL , SM6802S1RL , SM9435 , SM95N03A , SM9926 , IRF1405 , SMIRF10N65T2TL , SMIRF12N65T1TL , SMIRF12N65T2TL , SMIRF13N50T1TL , SMIRF13N50T2TL , SMIRF16N65T1TL , SMIRF16N65T2TL , SMIRF16N65T8TL .

History: IRF7309 | 2SK1671 | IRF7342D2PBF | 2SK3575-S | UT6898G-S08-R | SFI9630 | VB1240B

 

 
Back to Top

 


 
.