All MOSFET. SMIRF10N65T1TL Datasheet

 

SMIRF10N65T1TL Datasheet and Replacement


   Type Designator: SMIRF10N65T1TL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 60(max) nS
   Cossⓘ - Output Capacitance: 145 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO220
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SMIRF10N65T1TL Datasheet (PDF)

 4.1. Size:1202K  cn sps
 smirf10n65.pdf pdf_icon

SMIRF10N65T1TL

SMIRF10N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 10A SMIRF10N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 1.0(VGS=10V, ID=5A) on-state resistance, provide superior

 8.1. Size:1604K  cn sps
 smirf16n65.pdf pdf_icon

SMIRF10N65T1TL

SMIRF16N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6(VGS=10V, ID=8A) on-state resistance, provide superior

 8.2. Size:1313K  cn sps
 smirf12n65.pdf pdf_icon

SMIRF10N65T1TL

SMIRF12N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 12A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.75(VGS=10V, ID=6A) on-state resistance, provide superior

 8.3. Size:1558K  cn sps
 smirf18n50.pdf pdf_icon

SMIRF10N65T1TL

SMIRF18N5030V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 18A SMIRF18N50 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 500V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.35(VGS=10V, ID=9A) on-state resistance, provide superior

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History: 2SJ599 | HUFA75321D3S | 2SK1179 | HM6804D | IXTH21N50 | FCB11N60TM | IRLU8721PBF

Keywords - SMIRF10N65T1TL MOSFET datasheet

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